CHENMKO ENTERPRISE CO.,LTD 2SA2119TPT SURFACE MOUNT Low Ferquency PNP Transistor VOLTAGE 12 Volts CURRENT 0.5 Ampere APPLICATION * For switching,for muting. FEATURE SC-75/SOT-416 * Small surface mounting type. (SC-75/SOT-416) * A collector current is large. * Collector saturation voltage is low. VCE(sat)<=250mA At Ic=200mA/IB=10mA (2) 0.1 0.2±0.05 (3) 1.0±0.1 0.1 0.3±0.05 MARKING (1) CONSTRUCTION * PNP Silicon Transistor 0.5 1.6±0.2 0.5 0.1 0.2±0.05 0.8±0.1 * PU 0.6~0.9 0.15±0.05 0~0.1 0.1Min. 1.6±0.2 3 CIRCUIT 1 2 SC-75/SOT-416 Dimensions in millimeters MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - -15 Volts Collector - Emitter Voltage Open Base VCEO - -12 Volts Collector Current DC IC - -500 mAmps Peak Collector Current ICM - -1000 mAmps PTOT - 150 Total Power Dissipation TA ≤ 25OC; Note 1 mW Storage Temperature TSTG -55 +150 o Junction Temperature TJ - +150 o C TAMB -55 +150 o C Operating Ambient Temperature C Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2004-12 RATING CHARACTERISTICS ( 2SA2119TPT ) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. Typ. MAX. UNIT uA − − -0.1 collector-base breakdown voltage IC =-10uA collector-emitter breakdown voltage IC =-1mA -15 − V -12 − − − V BVEBO emitter-base breakdown voltage IE =-10uA -6 − − V hFE DC current transfer ratio VCE=-2V , IC=-10mA 270 − 680 VCEsat collector-emitter saturation voltage IC/IB=-200mA/-10mA − -100 -250 mV Cob collector output capacitance IE = 0; VCB = -10V ; f = 1 MH z − 6.5 − pF fT transition frequency IE = -10 mA; VCE= - 2V; f = 30 MHz − 260 − MHz ICBO collector cut-off current BVCBO BVCEO Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. VCB=-15V RATING CHARACTERISTIC CURVES ( 2SA2119TPT ) 1000 VCE=2V Ta=125°C Ta=25°C Ta= −40°C 100 50 20 10 5 2 200 Ta=125°C Ta=25°C Ta= −40°C 100 50 20 10 5 100 1.0 1 1.5 20 10 5 2 1 2 5 10 20 50 100 200 Fig.1 Grounded Emitter Propagation Characteristics Fig.2 DC Current Gain vs. Collector Current Ta=25°C 200 100 50 IC / IB=50 IC / IB=20 20 IC / IB=10 10 5 2 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 10000 IC / IB=20 5000 Ta= −40°C Ta=25°C Ta=125°C 2000 1000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 1 500 1000 COLLECTOR CURRENT : IC (mA) 500 Ta=125°C Ta=25°C Ta= −40°C 50 500 1000 COLLECTOR CURRENT : IC (mA) Fig.5 Base-Emitter Saturation Voltage vs.Collecter Current 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.3 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) 1000 TRANSITION FREQUENCY : fT (MHz) 0.5 IC / IB=20 200 2 0 1000 COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 500 BASE TO EMITTER VOLTAGE : VBE (V) 1 1000 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DC CURRENT GAIN : hFE 200 1 VCE=2V 500 500 BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR CURRENT : IC (mA) 1000 VCE=2V Ta=25°C 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : IC (mA) Fig.6 Gain Bandwidth Product vs. Emitter Current