CHENMKO ENTERPRISE CO.,LTD 2SC1766PT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.) SC-62/SOT-89 C * PC= 1.0 to 2.0W (mounted on ceramic substrate). * High saturation current capability. 1.6MAX. 4.6MAX. 0.4+0.05 2.5+0.1 CONSTRUCTION 0.8MIN. * NPN Switching Transistor +0.08 0.45-0.05 MARKING * hFE Classification P: 1766 +0.08 0.40-0.05 +0.08 0.40-0.05 1.50+0.1 1.50+0.1 Q: Q1766 4.6MAX. 1.7MAX. Y: Y1766 1 1 Base 2 3 2 Collector ( Heat Sink ) CIRCUIT 3 Emitter 1 B 2 C 3 E SC-62/SOT-89 Dimensions in millimeters MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - 50 Volts Collector - Emitter Voltage Open Base VCEO - 50 Volts Emitter - Base Voltage Open Collector VEBO - 5 Volts IC - 2 Amps Peak Collector Current ICM - 2 Amps Peak Base Current IBM - 0.4 Amps PTOT - 1000 mW TSTG -55 +150 o C C C Collector Current DC Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature TJ - +150 o TAMB -55 +150 o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-8 RATING CHARACTERISTIC CURVES ( 2SC1766PT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=50V CONDITION ICBO - - 0.1 uA Emitter Cut-off Current IC=0; VEB=5V ICEO - - 0.1 uA DC Current Gain VCE=2V; Note 1 IC=0.5A; Note 2 IC=2.0A hFE 70 20 - 390 - Collector-Emitter Saturation Voltage IC=1A; IB=0.05A VCEsat - - 0.5 Volts Base-Emitter Saturatio Voltage IC=1A; IB=0.05A VBEsat - - 1.2 mVolts Collector Capacitance IE=ie=0; VCB=-10V; f=1MHz CC - 40 - pF Transition Frequency IC=-0.5A; VCE=2V; f=100MHz fT - 120 - MHz SYMBOL MIN. TYPE MAX. UNITS ton - 0.1 - uSec ts - 1.0 - uSec tf - 0.1 - uSec SWITCHING TIMES ( Between 10% and 90% levels ) PARAMETERS Storage Time OUTPUT IB1 IB2 INPUT 20uSec Fall Time IB1 IB2 IB1=-IB2=0.05A Duty cycle<1% Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE(1) Classification P:82 to 180 Q: 120 to 270, Y: 180 to 390 30 ohmS Turn-on Time CONDITION 30V RATING CHARACTERISTIC CURVES ( 2SC1766PT ) Typical Electrical Characteristics Figure 1. VCE - IC Figure 2. VCE - IC 1.6 COMMON EMITTER T A =25 OC 1.2 I B =5mA 10mA 20mA 30mA 0.8 40mA 0.4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 1.6 0 0 0.4 0.8 1.2 COLLECTOR CURRENT I C (A) 1.6 COMMON EMITTER T A =100 OC 1.2 I B =3mA 20mA 30mA 40mA 0.4 40mA 0 2.0 0 0.4 0.8 1.2 COLLECTOR CURRENT I C (A) 1.6 2.0 Figure 4. hFE - IC 1.6 1000 COMMON EMITTER COMMON EMITTER 500 O T A =-55 C DC CURRENT GAIN hFE COLLECTOR-EMITTER VOLTAGE VCE (V) 10mA 0.8 Figure 3. VCE - IC 1.2 I B =5mA 10mA 30mA 20mA 40mA 0.8 0.4 TA=100OC V CE =2V 300 25OC 100 -55OC 50 30 50mA 0 0 0.4 0.8 1.2 COLLECTOR CURRENT I C (A) 1.6 10 10 2.0 30 Figure 5. VCE(sat) - IC 100 300 COLLECTOR CURRENT I C (mA) 1000 3000 Figure 6. VBE(sat) - IC 1 10 COMMON EMITTER 0.5 I C /I B =20 0.3 0.1 TA=100OC 25OC 0.05 -55OC 0.03 0.01 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5mA COMMON EMITTER 5 I C /I B =20 3 -55OC 1 0.5 TA=100OC 25OC 0.3 0.1 10 30 100 300 COLLECTOR CURRENT I C (mA) 1000 3000 10 30 100 300 COLLECTOR CURRENT I C (mA) 1000 3000 RATING CHARACTERISTIC CURVES ( 2SC1766PT ) Typical Electrical Characteristics Figure 7. IC - VBE Figure 8. PC - TA 1.6 COLLECTOR POWER DISSIPATION PC (W) 1.2 COLLECTOR CURRENT IC (A) COMMON EMITTER V CE =2V 1.2 T A = 100 OC 25 OC -55 OC 0.8 0.4 0 0 0.5 1.0 BASE-EMITTER V BE (V) 1.5 2.0 Figure 9. Safe Operation Area 3000 COLLECTOR CURRENT IC (mA) 10mS* 1000 500 300 IC max (continous) IC max (pulse)* 100mS* 1mS* 1S* DC operation TA=25OC 100 50 30 10 5 3 1 0.1 *: Single nonrepetitive pulse TA=25OC Curve must be derated linearly with increase in temperature Tested without a substrate 0.3 1.0 3.0 10 30 COLLECTOR-EMITTER VOLTAGE V CE (V) 100 (1) 1.0 (1) Mounted on ceramic substrate ( 250mm 2x0.8t ) (2) No heat sink 0.8 0.6 (2) 0.4 0.2 0 0 20 40 60 80 100 120 AMBIENT TEMPERATURE T A ( OC) 140 160