CHENMKO 2SD882PT

CHENMKO ENTERPRISE CO.,LTD
2SD882PT
SMALL FLAT
NPN Epitaxial Transistor
VOLTAGE 30 Volts
CURRENT 3 Ampere
APPLICATION
* Power driver and Dc to DC convertor .
FEATURE
SC-62/SOT-89
* Small flat package. (SC-62/SOT-89)
* Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A)
* High speed switching time: tstg= 1.0uSec (typ.)
* PC= 1.5 W (mounted on ceramic substrate).
* High saturation current capability.
1.6MAX.
4.6MAX.
0.4+0.05
2.5+0.1
CONSTRUCTION
0.8MIN.
* NPN Switching Transistor
+0.08
0.45-0.05
MARKING
4.6MAX.
1.7MAX.
* hFE Classification Q: Q82
+0.08
0.40-0.05
+0.08
0.40-0.05
P: P82
1.50+0.1
1.50+0.1
E: 882
1
1 Base
2
3
2 Collector ( Heat Sink )
CIRCUIT
3 Emitter
1
B
2
C
3
E
SC-62/SOT-89
Dimensions in millimeters
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
MAX.
UNITS
Collector - Base Voltage
RATINGS
Open Emitter
CONDITION
VCBO
-
40
Volts
Collector - Emitter Voltage
Open Base
VCEO
-
30
Volts
Emitter - Base Voltage
Open Collector
VEBO
-
5
Volts
IC
-
3
Amps
Peak Collector Current
ICM
-
3
Amps
Peak Base Current
IBM
-
0.5
Amps
PTOT
-
1500
mW
TSTG
-55
+150
o
C
C
C
Collector Current DC
Total Power Dissipation
TA ≤ 25OC; Note 1
Storage Temperature
Junction Temperature
Operating Ambient Temperature
TJ
-
+150
o
TAMB
-55
+150
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2003-8
RATING CHARACTERISTIC CURVES ( 2SD882PT )
CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
TYPE
MAX.
UNITS
Collector Cut-off Current
PARAMETERS
IE=0; VCB=30V
CONDITION
ICBO
-
-
1.0
uA
Emitter Cut-off Current
IC=0; VEB=3V
IEBO
-
-
1.0
uA
DC Current Gain
VCE=2V; Note 1
IC=0.02A
IC=1.0A; Note 2
hFE
30
100
160
500
Collector-Emitter Saturation Voltage
IC=2A; IB=0.2A
VCEsat
-
0.3
0.5
Volts
Base-Emitter Saturatio Voltage
IC=2A; IB=-0.2A
VBEsat
-
1.0
2.0
Volts
Collector Capacitance
IE=ie=0; VCB=10V;
f=1MHz
CC
-
55
-
pF
Transition Frequency
IC=0.02A; VCE=20V;
f=100MHz
fT
-
100
-
MHz
SYMBOL
MIN.
TYPE
MAX.
UNITS
ton
-
0.1
-
uSec
ts
-
1.0
-
uSec
tf
-
0.1
-
uSec
SWITCHING TIMES ( Between 10% and 90% levels )
PARAMETERS
CONDITION
OUTPUT
Storage Time
IB1
IB2
INPUT
20uSec
Fall Time
IB1=-IB2=0.05A
Duty cycle<1%
IB2
30 ohmS
Turn-on Time
IB1
30V
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE(2) Classification Q: 100 to 200, P: 160 to 320, E: 250 to 500.
RATING CHARACTERISTIC CURVES ( 2SD882PT )
Typical Electrical Characteristics
Figure 2. Cutoff Frequency - IC
3000
3000
1000
1000
V CE =5V
CUTOFF FREQUENCY (MHz)
COLLECTOR CAPACITANCE CC (pF)
Figure 1. CC - Reverse VCB
100
10
1
0.1
100
10
1
0.3
1.0
3.0
10
30
100
1
10
COLLECTOR-BASE REVERSE BIAS VOLTAGE V CB (V)
COMMON EMITTER
V CE =2V
500
300
100
50
30
COLLECTOR POWER DISSIPATION PC (W)
1.5
1000
DC CURRENT GAIN hFE
1000
Figure 4. PC - TA
Figure 3. hFE - IC
1.4
(1) Mounted on ceramic substrate
( 250mm 2x0.8t )
(2) No heat sink
(1)
1.2
1.0
0.8
(2)
0.6
0.4
0.2
0
10
10
30
100
300
1000
0
3000
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE T A ( OC)
COLLECTOR CURRENT I C (mA)
Figure 5. VCE(sat) - IC
Figure 6. VBE(sat) - IC
1
10
COMMON EMITTER
0.5
BASE-EMITTER SATURATION VOLTAGE
VBE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat) (V)
100
COLLECTOR CURRENT I C (mA)
I C /I B =10
0.3
0.1
0.05
0.03
0.01
COMMON EMITTER
5
I C /I B =10
3
1
0.5
0.3
0.1
10
30
100
300
COLLECTOR CURRENT I C (mA)
1000
3000
10
30
100
300
COLLECTOR CURRENT I C (mA)
1000
3000
RATING CHARACTERISTIC CURVES ( 2SD882PT )
Typical Electrical Characteristics
Figure 9. Safe Operation Area
COLLECTOR CURRENT IC (mA)
30000
10000
1 mS
5000
3000
100 mS
1000
500
300
100
50
30
10
0.1
1S
Single nonrepetitive pulse
TA=25OC
Curve must be derated linearly
with increase in temperature
Tested without a substrate
0.3
1.0
3.0
10
COLLECTOR-EMITTER VOLTAGE V CE (V)
30
100