CHENMKO ENTERPRISE CO.,LTD 2SA1213PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: t stg= 1.0uSec (typ.) 1.7MAX. 1.6MAX. 0.4+0.05 2.5+0.1 4.6MAX. * High saturation current capability. 0.8MIN. CONSTRUCTION * PNP Switching Transistor +0.08 0.45-0.05 MARKING +0.08 0.40-0.05 +0.08 0.40-0.05 1.50+0.1 1.50+0.1 * HFE(O):NO * HFE(Y):NY 1 1 Base 4.6MAX. * PC= 1.0 to 2.0W (mounted on ceramic substrate). 2 3 2 Collector ( Heat Sink ) CIRCUIT 3 Emitter 1 B 2 C 3 E SC-62/SOT-89 Dimensions in millimeters MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - -50 Volts Collector - Emitter Voltage Open Base VCEO - -50 Volts Emitter - Base Voltage Open Collector VEBO - -5 Volts IC - -2 Amps Peak Collector Current ICM - -2 Amps Peak Base Current IBM - -0.4 Amps PTOT - 1000 mW TSTG -55 +150 o C C C Collector Current DC Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature TJ - +150 o TAMB -55 +150 o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2002-10 RATING CHARACTERISTIC CURVES ( 2SA1213PT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=-50V CONDITION ICBO - - -0.1 uA Emitter Cut-off Current IC=0; VEB=-5V ICEO - - -0.1 uA DC Current Gain VCE=-2V; Note 1 IC=-0.5A; Note 2 IC=-2.0A hFE 70 20 - 240 - Collector-Emitter Saturation Voltage IC=-1A; IB=-0.05A VCEsat - - -0.5 Volts Base-Emitter Saturatio Voltage IC=-1A; IB=-0.05A VBEsat - - -1.2 mVolts Collector Capacitance IE=ie=0; VCB=10V; f=1MHz CC - 40 - pF Transition Frequency IC=-0.5A; VCE=-2V; f=100MHz fT - 120 - MHz SYMBOL MIN. TYPE MAX. UNITS ton - 0.1 - uSec ts - 1.0 - uSec tf - 0.1 - uSec SWITCHING TIMES ( Between 10% and 90% levels ) PARAMETERS CONDITION OUTPUT IB2 INPUT Storage Time IB1 20uSec Fall Time IB2 30 ohmS Turn-on Time -IB1=IB2=0.05A Duty cycle<1% Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE(1) Classification O: 70 to 140, Y: 120 to 240 IB1 -30V RATING CHARACTERISTIC CURVES ( 2SA1213PT ) Typical Electrical Characteristics Figure 1. VCE - IC Figure 2. VCE - IC -1.6 COMMON EMITTER T A =25 OC -1.2 I B =-5mA -10mA -20mA -30mA -0.8 -40mA -0.4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) -1.6 0 0 -0.4 -0.8 -1.2 COLLECTOR CURRENT I C (A) -1.6 COMMON EMITTER T A =100 OC -1.2 I B =-3mA -20mA -0.8 -40mA -0.4 -40mA 0 -2.0 0 -0.4 -0.8 -1.2 COLLECTOR CURRENT I C (A) -1.6 -2.0 Figure 4. hFE - IC -1.6 1000 COMMON EMITTER COMMON EMITTER 500 O T A =-55 C -1.2 I B =-5mA -10mA -30mA -20mA -40mA -0.8 DC CURRENT GAIN hFE COLLECTOR-EMITTER VOLTAGE VCE (V) -10mA -30mA Figure 3. VCE - IC -0.4 TA=100OC V CE =-2V 300 25OC 100 -55OC 50 30 -50mA 0 0 -0.4 -0.8 -1.2 COLLECTOR CURRENT I C (A) -1.6 10 -10 -2.0 -30 Figure 5. VCE(sat) - IC -1 -1000 -3000 -10 COMMON EMITTER -0.5 I C /I B =20 -0.3 -0.1 TA=100OC 25OC -0.05 -55OC -0.03 -0.01 -10 -100 -300 COLLECTOR CURRENT I C (mA) Figure 6. VBE(sat) - IC -30 -100 -300 COLLECTOR CURRENT I C (mA) -1000 -3000 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -5mA COMMON EMITTER -5 I C /I B =20 -3 -55OC -1 -0.5 TA=100OC 25OC -0.3 -0.1 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -1000 -3000 RATING CHARACTERISTIC CURVES ( 2SA1213PT ) Typical Electrical Characteristics Figure 7. IC - VBE Figure 8. PC - TA -1.6 COLLECTOR CURRENT IC (A) V CE =-2V -1.2 T A = 100 OC 25 OC -55 OC -0.8 -0.4 0 0 -0.4 -0.8 -1.2 BASE-EMITTER V BE (V) -1.6 -2.0 Figure 9. Safe Operation Area -3000 COLLECTOR CURRENT IC (mA) 10mS* -1000 -500 -300 IC max (continous) IC max (pulse)* 100mS* 1mS* 1S* DC operation TA=25OC -100 -50 -30 -10 -5 -3 -1 -0.1 *: Single nonrepetitive pulse TA=25OC Curve must be derated linearly with increase in temperature Tested without a substrate -0.3 -1.0 -3.0 -10 -30 COLLECTOR-EMITTER VOLTAGE V CE (V) -100 COLLECTOR POWER DISSIPATION PC (W) 1.2 COMMON EMITTER (1) 1.0 (1) Mounted on ceramic substrate ( 250mm 2x0.8t ) (2) No heat sink 0.8 0.6 (2) 0.4 0.2 0 0 20 40 60 80 100 120 AMBIENT TEMPERATURE T A ( OC) 140 160