CHENMKO ENTERPRISE CO.,LTD 2SK3541PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching (30V, 100mA) FEATURE SOT-723 * Small surface mounting type. (SOT-723) * Low on-resistance * Fast switching speed * Easily designed drive circuits * Easy to parallel (S) 0.22 (3) (D) (G) 0.8 (2) 0.4 1.2 0.4 (1) 0.32 CONSTRUCTION 0.22 0.8 Silicon N-Channel MOSFET 0.5 0.13 0.15Max. D CIRCUIT 0.5±0.5 3 1G S Dimensions in millimeters 2 Absolute Maximum Ratings SOT-723 TA = 25°C unless otherwise noted 2SK3541PT Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage - Continuous ±20 V ID Drain Current - Continuous 100 mA IDR Reverse Drain Current - Continuous 30 - Pulsed (Note1) - Pulsed (Note1) PD Power Dissipation (Note2) TJ Operating Temperature Range TSTG Storage Temperature Range Note: 1. Pw < 10uA , Duty cycle < 1% 2. With each pin mounted on the recommended land Units V 400 mA 100 mA 400 mA 150 mW 150 °C -55 to 150 °C 2004-06 RATING CHARACTERISTIC CURVES ( 2SK3541PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 30 Typ Max Units 1 µA 0.5 mA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10µA IDSS Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V V TC=125°C IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 1 µA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -1 µA 1.5 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VGS = 4.0 V, ID = 10 mA 5.0 8.0 VGS = 2.5 V, ID = 1.0 mA 7.0 13 gFS Forward Transconductance VDS = 3V, ID = 100 µA VDS = 3.0 V , ID = 10 m A 0.8 20 Ω mS DYNAMIC CHARACTERISTICS VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn-On Time VDD = 5.0 V, RL = 500 Ω, ID = 10 mA, VGS = 5.0 V, RGEN = 10 Ω Turn-Off Time VDD = 5.0 V, RL = 500 Ω, ID = 10 mA, VGS = 5.0 V, RGEN = 10 Ω tr toff tf 13 pF 9 4 15 nS 35 80 80 nS RATING CHARACTERISTIC CURVES ( 2SK3541PT ) Typical Electrical Characteristics FIG. 1 TYPICAL TRANSFER CHARACTERISTICS DRAIN CURRENT : ID (A) 100m FIG. 2 REVERSE DRAIN CURRENT V.S SOURCE-DRAIN VOLTAGE VDS=3V Pulsed REVERSE DRAIN CURRENT : IDR (A) 200m 50m 20m 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 0.2m VGS=0V Pulsed 100m 50m 20m Ta=125°C 75°C 25°C −25°C 10m 5m 2m 1m 0.5m 0.2m 0.1m 3 2 1 4 0 0.5 1.5 1 GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) FIG. 3 GATE THRESHOLD VOLTAGE V.S CHANNEL TEMPERATURE FIG. 4 FROWARD TRANSFER ADMITTANCE V.S DRAIN CURRENT 0.5 VDS=3V Pulsed 0.2 Ta=−25°C 0.1 25°C 75°C 0.05 125°C 2 VDS=3V ID=0.1mA Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) GATE THRESHOLD VOLTAGE : VGS(th) (V) 0.1m 0 200m 1.5 1 0.5 0.02 0.01 0.005 0.002 0 −50 −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) 0.001 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 DRAIN CURRENT : ID (A) 0.5 RATING CHARACTERISTIC CURVES ( 2SK3541PT ) Typical Electrical Characteristics (continued) FIG. 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE V.S DRAIN CURRENT 20 10 50 VGS=4V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 50 FIG. 6 STATIC DRAIN-SOURCE ON-STATE RESISTANCE V.S DRAIN CURRENT Ta=125°C 75°C 25°C −25°C 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 DRAIN CURRENT : ID (A) 0.2 0.5 20 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 10 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5