CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHT170PT CURRENT 0.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small surface mounting type. (SC-59) * High density cell design for low R DS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. (2) 0.95 (3) 1.7~2.1 2.7~3.1 0.95 (1) 0.3~0.51 CONSTRUCTION 1.2~1.9 * N-Channel Enhancement MARKING * AT 0.89~1.3 0.085~0.2 D CIRCUIT 0~0.1 0.3~0.6 3 2.1~2.95 1G S Dimensions in millimeters 2 Absolute Maximum Ratings SC-59/SOT-346 TA = 25°C unless otherwise noted Symbol Parameter CHT170PT Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage 60 V VGSS Gate-Source Voltage - Continuous - Non Repetitive (tp < 50µs) ID Maximum Drain Current - Continuous - Pulsed PD TJ,TSTG Maximum Power Dissipation Operating and Storage Temperature Range ±20 ±40 500 800 V mA 300 mW -55 to 150 °C 417 K/W Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 2004-4 RATING CHARACTERISTIC CURVES ( CHT170PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min Typ 60 70 Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 1 µA I GSS Gate-Body Leakage VGS = 15 V, VDS = 0 V +10 µA I GSS Gate-Body Leakage VGS = 15 V, VDS = 0 V -10 µA ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID= 200 m A g FS V Forward Transconductance VDS = VGS, ID = -250 µA VDS = 10 V DS(on), ID = 200 m A 0.8 2.1 3.0 V 5 Ω mS 80 DYNAMIC CHARACTERISTICS C iss C oss Input Capacitance Output Capacitance C rss Reverse Transfer Capacitance t on Turn-On Time t off Turn-Off Time VDS = 25 V, VGS = 0 V, f = 1.0 MHz 22 40 11 30 2.0 V DD = 25V I D = 0.5A , VGS = -10 V, R GEN = 50 Ω pF 5 10 10 nS RATING CHARACTERISTIC CURVES ( CHT170PT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics 7 V G S =91. 00VV 0.8 0.6 0.4 0 .2 0 0 T J=25°C 6 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 1.0 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 1 5 VG S = 5 . 0 V 4 3 VG S = 1 0 V 2 1 0 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 5 0 Figure 3. On-Resistance Variation with Temperature VG S = 5 . 0 V 1.0 ,ID=0.05A 0.5 -30 -5 20 45 70 95 120 145 1 350 300 250 200 150 100 50 25 100 150 50 75 125 TA , AMBIENT TEMPERATURE (°C) 5 4 ID = 5 0 m A ID=500mA 3 2 1 0 0 2 4 6 8 10 12 14 V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Max Poewr Disspation vs Ambient Temperature 0 R DS(on) , NORMALIZED ,ID=0.5uA DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VG S = 1 0 V TJ , JUNCTION T EMPERATURE (°C) PD,POWRE DISSPATION (mw) 0.8 6 1.5 0 0.4 0.6 I D , DRA IN CURRENT (A) Figure 4. On-Resistance vs , Gate-Source Voltage 2.0 0 - 55 0.2 175 200 16 18