CHENMKO ENTERPRISE CO.,LTD 2SB1197KPT SURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE (3) (2) .055 (1.40) .047 (1.20) C (3) E (2) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) * PN @hFE as Q Grade * RC @hFE as R Grade .045 (1.15) .033 (0.85) .002 (0.05) MARKING .066 (1.70) * PNP Switching Transistor .110 (2.80) .082 (2.10) .119 (3.04) (1) CONSTRUCTION CIRCUIT .019 (0.50) .041 (1.05) .033 (0.85) * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. .018 (0.30) SOT-23 * Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1000mA). * Suitable for high packing density. (1)B SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -40 V VCEO collector-emitter voltage open base − -32 V VEBO emitter-base voltage open collector − -5 V IC collector current DC − -0.8 A ICM peak collector current − -1.0 A IBM peak base current − -80 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-5 RATING CHARACTERISTIC CURVES ( 2SB1197KPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 500 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BVCBO collector-base breakdown voltage IE = 0; IC =-50 uA -40 − V BVCEO collector-emitter breakdown voltage IB = 0; IC =-1 mA -32 − V BV EBO emitter-base breakdown voltage IC = 0; IE =-50 uA -5 − V ICBO collector cut-off current IE = 0; VCB = - 20 V − -500 nA IEBO emitter cut-off current IC = 0; VEB = - 4 V − DC current gain VCE = -3V; note 1 120 -500 390 nA hFE VCEsat collector-emitter saturation voltage IC = -100 mA IC = -500 0 mA, IB=-50 mA − -500 mV Cc collector capacitance IE = ie = 0; VCB =-10 V ; f = 1 MHz 12Typ. 30 pF fT transition frequency IC = 10 mA; VCE = - 2 0 V ; f = 100 MHz 50 200Typ. MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. hFE: Q Gade: 120~270 R Gade: 180~390 RATING CHARACTERISTIC CURVES ( 2SB1197KPT ) Fig.1 DC Current gain vs. collector current -1000 TA=25OC COLLECTOR SATURATION VOLTAGE: VCE (sat) mV DC CURRENT GAIN: hFE 1000 Fig.2 Collector-emittersaturation voltage vs. collector current VCE=-3V -2V -1V 100 10 1 -1m -10m -100m TA=25OC -100 IC/IB=50 20 10 -10 -1 -1m -1 COLLECTOR CURRENT: IC (A) TRANSITION FREQUENCY: fT (MHz) TA=25OC VCE=-5V 100 10 1 -1m -10m -100m EMITTER CURRENT: IE (A) -100m -1 Fig.4 Collector output capacitance COLLECTOR OUTPUT CAPACITAQNCETAGE: CCB pF Fig.3 Gain bandwidthproduct vs. emitter current 1000 -10m COLLECTOR CURRENT: IC (A) -1 1000 TA=25OC f=1MHz IE=0A 100 10 1 -1m -10m -100m -1 COLLECTOR TO BASE VOLATGE: VCB (V) RATING CHARACTERISTIC CURVES ( 2SB1197KPT ) Fig.5 Grounded emittterpropgation characteristics -200 TA=25OC VCE=6V -100 -10 -1.0mA TA=25OC -0.9mA COLLECTOR CURRENT: IC (mA) COLLOCTOR CURRENT : IC (mA) -1000 Fig.6 Grounded emitter output characteristics -0.8mA -0.7mA -0.6mA -0.5mA -100 -0.4mA -0.3mA -0.2mA -0.1mA -1 -0.4 -0.8 -1.2 -1.6 -0 BASE TO EMITTER VOLTAGE: VBE (V) -500 -20mA -18mA -16mA -14mA -12mA -400 -10mA -8mA -6mA -300 -4mA -200 IB=-2mA -100 TA=25OC 0 -0 -0.5 -10 -20 COLLECTOR TO EMITTER VOLTAGE: VCE (V) Fig.7 Grounded emitter output characteristics COLLECTOR CURRENT: IC (mA) IB=0mA 0 0 -1.0 COLLECTOR TO EMITTER VOLTAGE: VCE (V)