CHENMKO ENTERPRISE CO.,LTD CHT3055ZPT SURFACE MOUNT NPN SILICON Transistor VOLTAGE 60 Volts CURRENT 6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 * Suitable for high packing density. * High saturation current capability. 6.50+0.20 0.90+0.05 3.5+0.2 7.0+0.3 3.00+0.10 CONSTRUCTION 0.70+0.10 0.70+0.10 2.30+0.1 MARKING 0.9+0.2 2.0+0.3 *NPN SILICON Transistor 2.0+0.3 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 * ZDN 1 1 Base CIRCUIT 3 2 2 Emitter C (3) 3 Collector ( Heat Sink ) (1) B E(2) SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 100 V VCEO collector-emitter voltage open base − 60 V VEBO emitter-base voltage open collector − 7.0 V 6.0 A IC collector current (DC) − IB Base Current − 3.0 A Ptot total power dissipation − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CHT3055ZPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICEO collector cut-off current VCE=30 V − IEBO emitter cut-off current VEB=7.0V − 5.0 hFE DC current gain IC = 4.0A; VCE = 4V IC =6.0A; VCE = 4V 20 5.0 70 − VCEsat collector-emitter saturation voltage IC=4.0A,IB=400mA − 1.1 V VBEON base-emitter saturation voltage IC = 4.0A; VCE = 4V − 1.5 V fT transition frequency IC = 500mA; VCE = 1 0 V; f = 1.0MHz 2.5 − 700 uA mA MHz