CHENMKO CHM3413SPT

CHENMKO ENTERPRISE CO.,LTD
CHM3413SPT
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 20 Volts
CURRENT 3.5 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SC-88/SOT-363
FEATURE
* Small flat package. (SC-88 )
* High density cell design for extremely low RDS(ON).
* Rugged and reliable.
* High saturation current capability.
(1)
(6)
0.65
1.2~1.4
2.0~2.2
0.65
CONSTRUCTION
(3)
* P-Channel Enhancement
(4)
0.15~0.35
1.15~1.35
MARKING
* 3413
0.8~1.1
0.08~0.15
CIRCUIT
6
1
D
D
S
D
D
G
2.15~2.45
Dimensions in millimeters
3
Absolute Maximum Ratings
Symbol
0~0.1
0.1 Min.
4
SC-88/SOT-363
TA = 25°C unless otherwise noted
Parameter
CHM3413SPT
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±12
V
Maximum Drain Current - Continuous
-3.5
ID
A
- Pulsed
-15
PD
Maximum Power Dissipation
TJ
Operating Temperature Range
-55 to 150
°C
TSTG
Storage Temperature Range
-55 to 150
°C
250
°C/W
625
mW
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
2007-10
RATING CHARACTERISTIC CURVES ( CHM3413SPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
-20
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = -20 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
-1
µA
VGS = 12V,VDS = 0 V
+100
nA
VGS = -12V, VDS = 0 V
-100
nA
-0.8
V
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
VDS = VGS, ID = -250 µA
-0.36
VGS=-4.5V, ID=-3.4A
76
95
VGS=-2.5V, ID=-2.4A
97
120
VDS = -5V, ID = -2.8A
6
mΩ
S
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q
Gate-Drain Charge
gd
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=-6V, ID=-2.8A
VGS=-4.5V
4.8
8
1
nC
1
V DD= -6V
10
I D = -1.0A , VGEN = -4.5 V
13
23
RG= 6 Ω
18
25
15
20
16
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
-1.5
A
V SD
Drain-Source Diode Forward Voltage I S = -1.5A , VGS = 0 V
-1.2
V