CHENMKO ENTERPRISE CO.,LTD CHM9407AZPT SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) * High density cell design for extremely low RDS(ON). 1.65+0.15 6.50+0.20 * Rugged and reliable. 0.90+0.05 2.0+0.3 CONSTRUCTION * P-Channel Enhancement 0.70+0.10 0.70+0.10 2.30+0.1 0.70+0.10 7.0+0.3 3.5+0.2 3.00+0.10 2.0+0.3 0.9+0.2 0.27+0.05 0.01~0.10 4.60+0.1 1 1 Gate 3 CIRCUIT D 3 2 2 Source 3 Drain ( Heat Sink ) 1 G Dimensions in millimeters 2S Absolute Maximum Ratings Symbol SC-73/SOT-223 TA = 25°C unless otherwise noted Parameter CHM9407AZPT Units VDSS Drain-Source Voltage -60 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous -3.7 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) -15 3000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 42 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2005-02 RATING CHARACTERISTIC CURVES ( CHM9407AZPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min -60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -48 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA -3 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = -250 µA -1 VGS=-10V, ID=-3.7A 98 118 VGS=-4.5V, ID=-3.1A 120 150 VDS = -5V, ID = -3.7A 7 mΩ S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time VDS=-30V, ID=-3.7A VGS=-10V 21 29 nC 3 4 V DD= -30V 13 I D = -1.0A , VGS = -10 V 9 30 RGEN= 6 Ω 48 150 22 75 45 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -1.3A , VGS = 0 V (Note 2) (Note 1) -1.3 A -1.2 V