CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CHM9926PAPT CURRENT 26 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. (TO-252A) .280 (7.10) .238 (6.05) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) CONSTRUCTION * N-Channel Enhancement (1) .417 (10.6) .346 (8.80) .261 (6.63) .213 (5.40) .220 (5.59) .195 (4.95) (3) (2) .035 (0.90) .025 (0.64) .102 (2.59) .078 (1.98) .024 (0.61) .016 (0.40) 1 Gate D (3) CIRCUIT 2 Source 3 Drain( Heat Sink ) (1) G Dimensions in inches and (millimeters) S (2) Absolute Maximum Ratings Symbol TO-252A TA = 25°C unless otherwise noted Parameter CHM9926PAPT Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V Maximum Drain Current - Continuous 26 ID A - Pulsed (Note 3) PD Maximum Power Dissipation at Tc = 25 °C TJ TSTG 78 38 W Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 50 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2006-02 RATING CHARACTERISTIC CURVES ( CHM9926PAPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 1 µA VGS = 12V,VDS = 0 V +100 nA VGS = -12V, VDS = 0 V -100 nA 1.5 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V 20 Forward Transconductance VDS = VGS, ID = 250 µA 0.5 VGS=4.5V, ID=8A 30 VGS=2.5V, ID=6.6A 40 VDS =10V, ID = 8A mΩ S 15 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd VDS=10V, ID=8A VGS=4.5V 10 15 nC 2.3 2.9 t on Turn-On Time V DD= 10V 20 40 tr Rise Time I D =1A , VGS = 4.5 V 18 40 t off Turn-Off Time RGEN= 6 Ω 60 108 tf Fall Time 28 56 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current 26 A V SD Drain-Source Diode Forward Voltage I S = 4A , VGS = 0 V 1.3 V