CHENMKO ENTERPRISE CO.,LTD CHT9013PT SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * HFE(L):J3 * HFE(H):J2 * HFE(J):J1 .066 (1.70) MARKING .110 (2.80) .082 (2.10) .119 (3.04) (1) *NPN Silicon Transistor (3) (2) .055 (1.40) .047 (1.20) .007 (0.177) .045 (1.15) .033 (0.85) C (3) CIRCUIT .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .002 (0.05) CONSTRUCTION .019 (0.50) .041 (1.05) .033 (0.85) * Surface mount package. (SOT-23) * Suitable for high packing density. .018 (0.30) FEATURE (1) B E(2) SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 VCEO collector-emitter voltage open base − 25 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 500 mA Ptot total power dissipation − 300 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C Tamb ≤ 25 °C; note 1 V Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-8 RATING CHARACTERISTIC CURVES ( CHT9013PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current VCB = 40V,IE=0 − 0.1 uA ICEO collector cut-off current VCE=20V,IB=0 − 0.1 uA − 0.1 uA 120 400 40 − IEBO emitter cut-off current VEB=5V ,IC=0 hFE DC current gain IC = 50 mA; VCE = 1V IC = 500 mA; VCE =1V VCE(sat) collector-emitter saturation voltage IC = 5 00 mA; IB = 50 m A − 0.6 V VBE(sat) base-emitter saturation voltage IC = 5 00 mA; IB = 50 m A − 1.2 V fT transition frequency IC = 20 mA; VCE = 6 V; f = 30MHz 150 − MHz Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE: Classification L: 120 to 200, H: 200 to 350, J: 300 to 400 RATING CHARACTERISTIC CURVES ( CHT9013PT ) Typical Electrical Characteristics FIG. 2 - DC collector current FIG. 1 - Static Characteristic 1000 IB=160uA VCE=1V IB=140uA 16 IB=120uA 14 IB=100uA hFE,DC CURRENT GAIN IC (mA),COLLECTOR CURRENT 20 18 12 IB=80uA 10 8 IB=60uA 6 IB=40uA 100 10 4 IB=20uA 2 0 1 0 10 20 40 30 50 1 VCE(V),COLLECTOR-EMITTER VOLTAGE FIG. 3 - Base-Emitter Saturation Voltage 100 VBE(sat) 10 VCE(sat) 1 1 10 100 1000 IC(mA),COLLECTOR CURRENT 10000 fT(MHZ),CURRENT GAIN BANDWIDTH PRODUCT VBE(SAT),VCE(SAT) (mV),SATURATION VOLTAGE IC=10IB 100 10000 1000 FIG. 4 - Current Gain Bandwidth Product Collector-Emitter Saturation Voltage 1000 10 IC(mA),COLLECTOR CURRENT 1000 VCE=6V 100 10 1 1 10 100 1000 IC(mA),COLLECTOR CURRENT 10000