COMCHIP C1815-G

COMCHIP
General Purpose Transistors
SMD Diodes Specialist
C1815-G (NPN)
RoHS Device
Features
SOT-23
0.119(3.00)
-Power dissipation
0.110(2.80)
3
P CM =0.2W
0.056(1.40)
0.047(1.20)
Marking: HF
1
2
0.006(0.15)
0.083(2.10)
Collector
3
0.002(0.05)
0.066(1.70)
0.044(1.10)
0.103(2.60)
0.035(0.90)
0.086(2.20)
1
Base
0.006(0.15) max
0.020(0.50)
0.007(0.20) min
0.013(0.35)
2
Emitter
Dimensions in inches and (millimeter)
O
Maximum Ratings (at Ta=25 C unless otherwise noted)
Symbol
Value
Unit
Collector-Base voltage
V CBO
-60
V
Collector-Emitter voltage
V CEO
-50
V
Emitter-Base voltage
V EBO
-5
V
Collector current-continuous
IC
150
mA
Total device dissipation
PD
200
mW
T J ,T STG
-55 to +150
Parameter
Junction and storage temperature range
O
C
O
Electrical Characteristics (at Ta=25 C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ.
Max
Unit
Collector-Base breakdown voltage
V (BR)CBO
I C =100μA, I E =0
60
V
Collector-Emitter breakdown voltage
V (BR)CEO
I C =100μA, I B =0
50
V
Collector cut-off current
I CBO
V CB =60V, I E =0
0.1
A
Collector cut-off current
I CEO
V CE =50V, I B =0
0.1
μA
Emitter cut-off current
I EBO
V EB =5V, I C =0
0.1
μA
DC current gain
h FE
V CE =6V, I C =2mA
400
130
Collector-Emitter saturation voltage
V CE(SAT)
I C =100mA, I B =10mA
0.25
V
Base-Emitter saturation voltage
V BE(SAT)
I C =100mA, I B =10mA
1
V
Transition frequency
fT
V CE =10V, I C =1mA
f=30MHz
MHz
80
Classification of h FE
Rank
L
H
Range
130 ~ 200
200 ~ 400
REV:A
QW-BTR23
Page 1
COMCHIP
General Purpose Transistors
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (C1815-G)
Fig.2 DC Current Gain Characteristics
Fig.1 I C vs. V CE Characteristics
240
3000
5.0
6.0
2.0
160
1.0
120
80
1000
h FE , DC Current Gain
200
I C , Collector Current (mA)
Common emitt er
V CE = 6V
V CE = 1V
3.0
0.5
O
T A =1 00 C
TA=25 OC
10 0
T A =- 25 OC
40
IB=0.2mA
0
0
1
2
3
5
4
6
7
10
0.1
8
V CE , Collector-Emitter Voltage (V)
10
100
300
Fig.4 Base-Emitter Saturation
Characteristics
3
30
V BE(SAT) , Base-Emitter Saturation
Voltage (V)
V CE(SAT) , Collector-Emitter Saturation
Voltage (V)
Fig.3 Collector-Emitter Saturation
Characteristics
Com m o n emit t e r
I C / I B =10
1
0.1
O
T A =1 0 0 C
O
TA= 2 5 C
0.01
0.1
O
T A =-25 C
Common e mi t t er
I C /I B =10
O
T A =25 C
10
1
0.1
1
10
100
0.1
300
I C , Collector Current (mA)
1
10
100
300
I C , Collector Current (mA)
Fig.5 Collector Power Derating Curve
Fig.6 Transition Frequency Characteristics
500
3000
f T , Transition Frequency (MHz)
P C , Collector Power Dissipation (mW)
1
I C , Collector Current (mA)
400
300
200
100
0
Common emi t t er
V C E =10V
O
T A= 2 5 C
1000
100
10
0
25
50
75
100
O
T A , Ambient Temperature ( C)
125
0.1
1
10
100
300
I C , Collector Current (mA)
REV:A
QW-BTR23
Page 2