COMCHIP General Purpose Transistors SMD Diodes Specialist C1815-G (NPN) RoHS Device Features SOT-23 0.119(3.00) -Power dissipation 0.110(2.80) 3 P CM =0.2W 0.056(1.40) 0.047(1.20) Marking: HF 1 2 0.006(0.15) 0.083(2.10) Collector 3 0.002(0.05) 0.066(1.70) 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) 1 Base 0.006(0.15) max 0.020(0.50) 0.007(0.20) min 0.013(0.35) 2 Emitter Dimensions in inches and (millimeter) O Maximum Ratings (at Ta=25 C unless otherwise noted) Symbol Value Unit Collector-Base voltage V CBO -60 V Collector-Emitter voltage V CEO -50 V Emitter-Base voltage V EBO -5 V Collector current-continuous IC 150 mA Total device dissipation PD 200 mW T J ,T STG -55 to +150 Parameter Junction and storage temperature range O C O Electrical Characteristics (at Ta=25 C unless otherwise noted) Parameter Symbol Conditions Min Typ. Max Unit Collector-Base breakdown voltage V (BR)CBO I C =100μA, I E =0 60 V Collector-Emitter breakdown voltage V (BR)CEO I C =100μA, I B =0 50 V Collector cut-off current I CBO V CB =60V, I E =0 0.1 A Collector cut-off current I CEO V CE =50V, I B =0 0.1 μA Emitter cut-off current I EBO V EB =5V, I C =0 0.1 μA DC current gain h FE V CE =6V, I C =2mA 400 130 Collector-Emitter saturation voltage V CE(SAT) I C =100mA, I B =10mA 0.25 V Base-Emitter saturation voltage V BE(SAT) I C =100mA, I B =10mA 1 V Transition frequency fT V CE =10V, I C =1mA f=30MHz MHz 80 Classification of h FE Rank L H Range 130 ~ 200 200 ~ 400 REV:A QW-BTR23 Page 1 COMCHIP General Purpose Transistors SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (C1815-G) Fig.2 DC Current Gain Characteristics Fig.1 I C vs. V CE Characteristics 240 3000 5.0 6.0 2.0 160 1.0 120 80 1000 h FE , DC Current Gain 200 I C , Collector Current (mA) Common emitt er V CE = 6V V CE = 1V 3.0 0.5 O T A =1 00 C TA=25 OC 10 0 T A =- 25 OC 40 IB=0.2mA 0 0 1 2 3 5 4 6 7 10 0.1 8 V CE , Collector-Emitter Voltage (V) 10 100 300 Fig.4 Base-Emitter Saturation Characteristics 3 30 V BE(SAT) , Base-Emitter Saturation Voltage (V) V CE(SAT) , Collector-Emitter Saturation Voltage (V) Fig.3 Collector-Emitter Saturation Characteristics Com m o n emit t e r I C / I B =10 1 0.1 O T A =1 0 0 C O TA= 2 5 C 0.01 0.1 O T A =-25 C Common e mi t t er I C /I B =10 O T A =25 C 10 1 0.1 1 10 100 0.1 300 I C , Collector Current (mA) 1 10 100 300 I C , Collector Current (mA) Fig.5 Collector Power Derating Curve Fig.6 Transition Frequency Characteristics 500 3000 f T , Transition Frequency (MHz) P C , Collector Power Dissipation (mW) 1 I C , Collector Current (mA) 400 300 200 100 0 Common emi t t er V C E =10V O T A= 2 5 C 1000 100 10 0 25 50 75 100 O T A , Ambient Temperature ( C) 125 0.1 1 10 100 300 I C , Collector Current (mA) REV:A QW-BTR23 Page 2