NPN 2N5671 – 2N5672 HIGH CURRENT FAST SWITCHING APPLICATIONS The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3. They are especially intended for high current, fast switching industrial applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage VCEX VCER Collector-Emitter Voltage VEB = -1.5V, REB = 50 Ω Collector-Emitter Voltage REB <= 50 Ω IC Collector Current IB Base Current Total Device Dissipation PD TJ Junction Temperature TStg Storage Temperature @ TC = 25° Value 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 Unit 90 120 120 150 V V 7.0 V 120 150 110 140 V V 30 A 10 A 140 Watts 200 °C -65 to +200 °C THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case COMSET SEMICONDUCTORS 2N5671 2N5672 Value Unit 1.25 °C/W 1/3 NPN 2N5671 – 2N5672 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VCER(SUS) RBE=50Ω VCEX(SUS) ICEO ICEX IEBO Ratings Test Condition(s) Collector-Emitter Sustaining Voltage (1) Collector-Emitter Sustaining Voltage (1) Collector-Emitter Sustaining Voltage (1) Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current hFE DC Current Gain (1) VCE(SAT) Collector-Emitter saturation Voltage (1) VBE(SAT) Base-Emitter saturation Voltage (1) Symbol 2N5671 2N5672 2N5671 IC=0.2 A , RBE=50Ω 2N5672 2N5671 IC=0.2 A , VBE=-1.5V , RBE=50Ω 2N5672 2N5671 VCE=80 V 2N5672 VCE=110 V, VEB=-1.5 V, 2N5671 VCE=135 V, VEB=-1.5 V, 2N5672 2N5671 VCE=100 V, VEB=-1.5 V, TC=150°C 2N5672 2N5671 VBE=7.0 V, IC=0 2N5672 2N5671 IC=15 A, VCE=2.0 V 2N5672 2N5671 IC=20 A, VCE=5.0 V 2N5672 2N5671 IC=15 A, IB=1.2 A 2N5672 2N5671 IC=15 A, IB=1.2 A 2N5672 IC=200 mA, IB=0 Ratings Test Condition(s) VBE Base-Emitter Voltage (1) fT Transition frequency Is/b Second Breakdown energy (2) Es/b Second Breakdown energy ton Turn-on time ts Storage time tf File time CBO Collector-Base Capacitance 2N5671 2N5672 2N5671 VCE=10 V, IC=2 A, 2N5672 VCE=24 V 2N5671 VCE=45 V 2N5672 2N5671 VBE=-4 V, RBE=20Ω ,L=180µH 2N5672 2N5671 2N5672 2N5671 IC=15 A , VCC=30 V IB1 = -IB2 =1.2 A 2N5672 2N5671 2N5672 2N5671 IE= 0 , VCB= 10 V , f = 1MHz 2N5672 IC=15 A, VCE=5.0 V Min Typ Mx Unit 90 120 110 140 120 150 - - - - 10 mA - - - - 12 10 15 10 mA - - 10 mA 20 - 100 20 - - - - 0.75 V V - V - - 1.5 Min Typ Mx Unit - - 1.6 V 50 - - MHz 5.8 0.9 - - A 20 - - mJ - - 0.5 - - 1.5 - - 0.5 - - 900 (1) Pulse Width ≈ 300 µs, Duty Cycle =1.5% (2) Pulsed : 1 s, non repetitive pulse COMSET SEMICONDUCTORS V 2/3 µs pF NPN 2N5671 – 2N5672 MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3