PNP BDT82 – BDT84 – BDT86 – BDT88 NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 – BDT83 – BDT85 – BDT87. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value -VCEO Collector-Emitter Voltage -IB = 0 -VCBO Collector-Base Voltage -IE = 0 -VEBO Emitter-Base Voltage -IC = 0 -IC Collector Current -ICM Collector Peak Current -IB Base Current Pt Total Power Dissipation @ TC = 25° COMSET SEMICONDUCTORS BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 Unit 60 80 100 120 60 80 100 120 V V 7 V 15 A 20 A 4 A 125 Watts 1/3 PNP BDT82 – BDT84 – BDT86 – BDT88 NPN BDT81 – BDT83 – BDT85 – BDT87 Symbol Ratings TJ Junction Temperature TStg Storage Temperature BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 Value Unit 150 °C -65 to +150 °C Value Unit 70 1 K/W K/W THERMAL CHARACTERISTICS Symbol RthJa RthJmb Ratings Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Mounting Base ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) -ICB0 Collector Cutoff Current -ICES Collector Cutoff Current -IEBO Emitter Cutoff Current -IE=0A , -VCB=60 V -IE=0A , -VCB=80 V -IE=0A , -VCB=100 V -IE=0A , -VCB=120 V -VBE=0 , -VCE= 60V -VBE=0 , -VCE= 80V -VBE=0 , -VCE= 100V -VBE=0 , -VCE= 120V -VEB=7.0 V, -IC=0 -IC=50 m A , -VCE=10 V HFE DC Current Gain (1) -IC=5 A , -VCE=4.0 V -IC=5 A , -IB=0.5 A -VCE(SAT) Collector-Emitter saturation Voltage (1) -IC=7 A , -IB=0.7 A COMSET SEMICONDUCTORS BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 Min Typ Mx Unit - - 0.2 0.2 0.2 0.2 1 1 1 1 - - 0.1 40 - - mA mA mA 40 - - - - 1 V - - 1.6 2/3 PNP BDT82 – BDT84 – BDT86 – BDT88 NPN BDT81 – BDT83 – BDT85 – BDT87 -VBE Base-Emitter voltage (1) Symbol -IC=5 A , -VCE=4 V Ratings Test Condition(s)Sec Second breakdown collector current Transition frequency Turn-on time Turn-off time -IS/B fT ton Toff BDT82 BDT84 BDT86 BDT88 -VCE=50 V , tP = 100 ms -VCE=10 V , -IC=0.5 A , f=1 MHz -IC=7 A , -IB1 = IB2 =0.7 A -IC=7 A , -IB1 = IB2 =0.7 A - - 1.5 Min Typ Mx Unit 2.5 - - A - 20 - 1 2 MHz (1) Pulse Duration = 300 µs, δ <= 2% MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,52 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 Base Collector Emitter Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS V 3/3 µs