PNP BD202 – BD204 NPN BD201 – BD203 SILCON EPITAXIAL-BASE POWER TRANSITORS The BD202 and BD204 are PNP transistors mounted in Jedec TO-220 plastic package. They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4Ω or 8Ω load. NPN complements are BD201 and BD203 ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCEO Collector-Emitter Voltage -VCBO Collector-Base Voltage -VEBO Emitter-Base Voltage -IC Collector Current -IC -ICM -ICSM Collector Current (non-repetitive peak value,tp max.2 ms) -IB Base Current PD Total Device Dissipation TJ Junction Temperature TStg Storage Temperature range @ TC = 25° Value BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 Unit 45 60 60 60 V V 5.0 V 8 A 12 A 25 A 3 A 60 Watts 150 °C -65 to +200 °C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-mb Ratings Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air COMSET SEMICONDUCTORS BD202 BD204 BD202 BD204 Value Unit 70 K/W 2.08 K/W 1/3 PNP BD202 – BD204 NPN BD201 – BD203 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol -ICEO -ICBO -IEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current -VCE=30 V, IB=0V -VCB=40 V, IE=0V, Tj=150°C -VBE=5.0 V, IC=0 -VCEO Collector Emitter Breakdown IC=0.2 A, IB=0V Voltage -VBE Base Emitter Voltage (1) -VCEK Knee Voltage (1) hFE DC Current Gain (1) -VCE(SAT) Collector-Emitter saturation Voltage (1) -VBE(SAT) Symbol -IC=3 A, -VCE=2.0 V -IC=3 A, -IB= value for which -IC=3.3 A at -VCE=2.0 V -IC=3 A, -VCE=2.0 V -IC=2 A, -VCE=20 V Base-Emitter saturation Voltage (1) Ratings -IC=3 A, -IB=0.3 A -IC=6 A, -IB=0.6 A -IC=6 A, -IB=0.6 A BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 BD202 BD204 Cut-off frequency -IC=0.3 A, -VCE=3.0 V fT Transition frequency -IC=0.3 A, -VCE=3.0 V f= 1MHz hFE1/hFE2 Forward bias second VCE=40 V,tp= 0.1 s Tamb= 25 °C breakdown collector current DC current gain ration of -IC=1 A, -VCE=2.0 V matched complementary pairs ton Turn-on time toff Turn-off time −ICon=2 A −IBon =IBoff =0.2 A - - 0.2 mA - - 1 mA - - 0.5 mA 45 60 - - V - - 1.5 V - 1 - V 30 30 - - - - - 1 - - 1.5 - - 2 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 25 - - KHz 7 - - MHz 1.5 - - A 2.5 - - - - - 1 - - 2 µs (1) Pulse conditions : tp < 300 µs, δ =2% COMSET SEMICONDUCTORS V Min Typ Mx Unit Test Condition(s) fhfe Is/b Min Typ Mx Unit Test Condition(s) 3/3 PNP BD202 – BD204 NPN BD201 – BD203 MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,52 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 base Collector emitter Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3