2N6249 – 2N6250 – 2N6251 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS The 2N6249 – 2N6250 – 2N6251 are NPN silicon transistors in Jedec TO-3. They are designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications. • • • • High Voltage Breakdown Rating Low Saturation Voltages Fast Switching Capability High Es/b Energy Handling Capability ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO #Collector-Emitter Voltage (1) VCER #Collector-Emitter Voltage (1) VCB Collector-Base Voltage (1) VEB Emitter-Base Voltage RBE=50Ω Continuous (1) IC Collector Current Peak Continuous (1) IB Base Current Peak Continuous IE Emitter Current Peak COMSET SEMICONDUCTORS Value 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 200 275 350 225 300 375 300 375 450 6.0 Unit V V Vdc Vdc 15 Adc 30 10 Adc 20 25 Adc 50 1/3 2N6249 – 2N6250 – 2N6251 2N6249 2N6250 2N6251 2N6249 @ TC = 100° 2N6250 2N6251 2N6249 Derate above 25° 2N6250 (1) 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 175 @ TC = 25° Pt Total Power Dissipation TJ Junction Temperature (1) Tstg Storage Temperature (1) Watts 100 1.0 W/°C -65 to +200 °C -65 to +200 °C (1) This data guaranteed in addition to JEDEC registered data. THERMAL CHARACTERISTICS Symbol Ratings RthJC Thermal Resistance, Junction to Case TL Maximum Lead Temperature for Soldering Purposes : 1/8’’ from Case for 5 Secondes 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 Value Unit 1 °C/W 275 °C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCEO(SUS) Collector-Emitter Sustaining Voltage VCER(SUS) Collector-Emitter Sustaining Voltage IC=200 mAdc, IB=0 IC=0.2 Adc, RBE=50Ω VCE=150 Vdc, IB=0 ICEO Collector-Emitter Current VCE=225 Vdc, IB=0 VCE=300 Vdc, IB=0 ICEX Min Typ Mx Unit Test Condition(s) Collector Cutoff Current VCE=225 Vdc, VEB(off)=1.5 Vdc VCE=225 Vdc, VEB(off)=1.5 Vdc, TC = 150°C VCE=300 Vdc, VEB(off)=1.5 Vdc VCE=300 Vdc, VEB(off)=1.5 Vdc, TC = 150°C VCE=375 Vdc, VEB(off)=1.5 Vdc VCE=375 Vdc, VEB(off)=1.5 Vdc, TC = 150°C COMSET SEMICONDUCTORS 2N6249 200 2N6250 275 2N6251 350 - - 2N6249 225 - - 2N6250 300 - - 2N6251 375 - - - - 5.0 5.0 5.0 5.0 - - 10 - - 5.0 - - 10 - - 5.0 - - 10 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2/3 Vdc V mAdc mAdc 2N6249 – 2N6250 – 2N6251 IEBO Emitter Cutoff Current Ssecond Breakdown Collector Current with base forward biased t=1.0S non-repetitive Ssecond Breakdown Energy with base reverse biased t=1.0S nonrepetitive Is/b Es/b hFE DC Current Gain VCE(SAT) Collector-Emitter saturation Voltage (1) VBE(SAT) Base-Emitter saturation Voltage (1) VBE=6.0 Vdc, IC=0 VCE=30 Vdc IC= 10 A, VBE(off) = 4.0Vdc, L = 50 µH IC=10 Adc, VCE=3.0 Vdc IC=10 Adc, IB=1 Adc IC=10 Adc, IB=1.25 Adc IC=10 Adc, IB=1.67 Adc IC=10 Adc, IB=1 Adc IC=10 Adc, IB=1.25 Adc IC=10 Adc, IB=1.67 Adc 2N6249 2N6250 2N6251 2N6249 - - 1.0 5.8 - - 2N6250 5.8 - - 2N6251 5.8 - - 2N6249 2.5 - - 2N6250 2.5 - - 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2.5 10 8.0 6.0 - - 50 50 50 1.5 1.5 1.5 2.5 2.5 2.5 mAdc Vdc mJ Vdc Vdc (1) Mesured on a curve tracer (60 Hz full-wave rectified sine wave ). Symbol Ratings Min Typ Mx Unit Test Condition(s) Current Gain – Bandwith Product VCE=10 Vdc, IC=1.0 Adc, ftest = 1.0 Mhz VCC= 200 Vdc, IC= 10 A, Duty Cycle <= 2.0% tp= 100 µs Rise Time IB1 = IB2=1.0 Adc Storage Time IB1 = IB2=1.25 Adc Fall Time IB1 = IB2=1.67 Adc fT tr ts tf 2N6259 2N6250 2N6251 2.5 - - MHz - - 2.0 3.5 1.0 µs MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3