JMNIC 2N6251

Product Specification
www.jmnic.com
2N6249 2N6250 2N6251
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High voltage
・Low saturation voltage
・Fast switching capability
APPLICATIONS
・For high voltage inverters ,switching regulators
and line operated amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2N6249
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N6250
Open emitter
375
2N6251
450
2N6249
200
2N6250
Emitter-base voltage
UNIT
300
Open base
2N6251
VEBO
VALUE
275
V
V
350
Open collector
6
V
IC
Collector current
10
A
ICM
Collector current-peak
30
A
IB
Base current
10
A
PT
Total power dissipation
175
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~200
TC=25℃
℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
JMnic
MAX
UNIT
1.0
℃/W
Product Specification
www.jmnic.com
2N6249 2N6250 2N6251
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2N6249
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6250
VBE(sat)
ICEV
ICEO
IEBO
Collector-emitter
saturation voltage
Base-emitter
voltage
saturation
IC=200mA ; IB=0
Collector cut-off current
IC=10A;IB=1.0A
2N6250
IC=10A;IB=1.25 A
2N6251
IC=10A;IB=1.67 A
2N6249
IC=10A;IB=1.0A
2N6250
IC=10A;IB=1.25 A
2N6251
IC=10A;IB=1.67 A
275
VCE=RatedVCEV;VBE=-1.5V
TC=125℃
2N6249
VCE=150V;IB=0
2N6250
VCE=225V;IB=0
2N6251
VCE=300V;IB=0
Emitter cut-off current
VEB=6V; IC=0
2N6249
hFE
DC current gain
2N6250
IC=10A ; VCE=3V
2N6251
fT
Is/b
UNIT
V
350
2N6249
Collector cut-off current
MAX
200
2N6251
VCE(sat)
TYP.
1.5
V
2.25
V
5.0
10
mA
5.0
mA
1.0
mA
10
50
8
50
6
50
Transition frequency
IC=1A ; VCE=10V
2.5
MHz
Second breakdown collector current
With base forward biased
VCE=30V,t=1.0s,
Nonrepetitive
5.8
A
Switching times
tr
Rise time
For 2N6249
IC=10A; IB1=-IB2=1.0A;VCC=200V
2.0
μs
ts
Storage time
For 2N6250
IC=10A;IB1=-IB2=1.25A;VCC=200V
3.5
μs
tf
Fall time
For 2N6251
IC=10A;IB1=-IB2=1.67A;VCC=200V
1.0
μs
JMnic
Product Specification
www.jmnic.com
2N6249 2N6250 2N6251
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
JMnic