COMSET 2N5671

 NPN 2N5671 – 2N5672
HIGH CURRENT FAST SWITCHING APPLICATIONS
The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3.
They are especially intended for high current, fast switching industrial applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
VCER
Collector-Emitter
Voltage
Collector-Emitter
Voltage
IC
Collector Current
IB
Base Current
VCEX
PD
VEB = -1.5V
REB = 50 Ω
REB <= 50 Ω
Total Device Dissipation @ TC = 25°
TJ
Junction Temperature
TStg
Storage Temperature
Value
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
Unit
90
120
120
150
V
V
7.0
V
120
150
110
140
V
V
30
A
10
A
140
W
200
°C
-65 to +200
°C
Value
Unit
1.25
°C/W
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
09/11/2012
COMSET SEMICONDUCTORS
1|4
NPN 2N5671 – 2N5672
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
VCER(SUS)
VCEX(SUS)
Ratings
Test Condition(s)
Collector-Emitter
Sustaining Voltage (*)
Collector-Emitter
Sustaining Voltage (*)
Collector-Emitter
Sustaining Voltage (*)
IC=200 mA, IB=0
IC=0.2 A, RBE=50Ω
IC=0.2 A , VBE=-1.5V
RBE=50Ω
Collector Cutoff Current
VCE=80 V
ICEX
Collector Cutoff Current
VCE=110 V, VEB=-1.5 V
VCE=135 V, VEB=-1.5 V
VCE=100 V, VEB=-1.5 V
TC=150°C
IEBO
Emitter Cutoff Current
VBE=7.0 V, IC=0
ICEO
IC=15 A, VCE=2.0 V
hFE
DC Current Gain (*)
IC=20 A, VCE=5.0 V
VCE(SAT)
VBE(SAT)
VBE
fT
Is/b
Es/b
CBO
Collector-Emitter
saturation Voltage (*)
Base-Emitter saturation
Voltage (*)
Base-Emitter Voltage
(*)
IC=15 A, IB=1.2 A
IC=15 A, IB=1.2 A
IC=15 A, VCE=5.0 V
Transition frequency
VCE=10 V, IC=2 A
Second Breakdown
energy (**)
Second Breakdown
energy
Collector-Base
Capacitance
VCE=24 V
VCE=45 V
VBE=-4 V, RBE=20Ω
L=180µH
IE= 0, VCB= 10 V
f = 1MHz
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
Min
Typ
Max
Unit
--
--
V
--
--
V
--
--
V
-
-
10
mA
-
-
12
10
15
10
mA
-
-
10
mA
20
-
100
20
-
-
-
-
0.75
-
-
1.5
-
-
1.6
V
50
-
-
MHz
5.8
0.9
-
-
20
-
-
mJ
-
-
900
pF
90
120
110
140
120
150
-
V
09/11/2012
COMSET SEMICONDUCTORS
2|4
A
NPN 2N5671 – 2N5672
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ton ts tf
Ratings
Turn-on time Storage
time File time
Test Condition(s)
IC=15 A , VCC=30 V
IB1 = -IB2 =1.2 A
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
Min
Typ
Max
-
-
0.5
-
-
1.5
-
-
0.5
(*) Pulse Width ≈ 300 µs, Duty Cycle =1.5%
(**) Pulsed : 1 s, non repetitive pulse
09/11/2012
COMSET SEMICONDUCTORS
3|4
Unit
µs
NPN 2N5671 – 2N5672
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
A
B
C
D
E
G
N
P
R
U
V
min
11
0.97
1.5
8.32
19
10.70
16.50
25
3.84
38.50
29.90
Pin 1 :
Pin 2 :
Case :
typ
-
max
13.10
1.15
1.65
8.92
22
11.1
17.20
27,20
4.21
40.13
30.40
Base
Emitter
Collector
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use
of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without
notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor
does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in
life support devices or systems.
www.comsetsemi.com
09/11/2012
[email protected]
COMSET SEMICONDUCTORS
4|4