Product Specification www.jmnic.com 2N6259 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High power dissipation APPLICATIONS ・Designed for high power audio ,disk head positioners,linear amplifiers,switching regulators solenoid drivers,and DC-DC converters or inverters PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 170 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 16 A ICM Collector current-peak 30 A IB Base current 4 A IBM Base current-peak 15 A PD Total Power Dissipation 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N6259 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER CONDITIONS MIN TYP. MAX Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat-1 Collector-emitter saturation voltge IC=8A ;IB=0.8A 1.5 V VCEsat-2 Collector-emitter saturation voltge IC=16A ;IB=3.2A 2.5 V VBE Base-emitter on voltage IC=8A ; VCE=2V 2.0 V ICEO Collector cut-off current VCE=130V; IB=0 10 mA ICEX Collector cut-off current VCE=150V; VBE(off)=1.5V 2.0 mA ICBO Emitter cut-off current VCB=150V; IE=0 2.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=8A ; VCE=2V 15 hFE-2 DC current gain IC=16A ; VCE=4V 10 JMnic 150 UNIT V 60 Product Specification www.jmnic.com 2N6259 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic