BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current PTOT Power Dissipation TJ Junction Temperature TStg Storage Temperature @ TC = 25° Value BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 181T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 COMSET SEMICONDUCTORS Unit 60 90 140 60 100 200 V V 10 V 6 A 3 A 87.5 Watts 200 -65 to +200 °C 1/4 BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value Unit 2 °C/W BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(BR) V(BR)CBO ICEO Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) IC=50 mA, IB=0 ICES VCE(SAT) BDY23, 180T2 60 - - BDY24, 181T2 90 - - BDY25, 182T2 140 - - BDY23, 180T2 60 - - V Collector-Base Breakdown Voltage (*) IC=3 mA BDY24, 181T2 100 - - 200 - - Collector-Emitter Cutoff Current BDY25, 182T2 BDY23 BDY24 BDY25 - VCE=60 V VCE=90 V - 1.0 mA Emitter-Base Cutoff Current VEB=10 V BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 - - 1.0 mA VCE=60 V VBE=0 V BDY23, 180T2 - - 0.5 VCE=100 V VBE=0 V BDY24, 181T2 - - 1.0 VCE=180 V VBE=0 V BDY25, 182T2 - - 1.0 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 - - 1 0.6 0.6 VCE=140 V IEBO Min Typ Mx Unit Collector-Emitter Cutoff Current Collector-Emitter saturation Voltage (*) IC=2.0 A, IB=0.25 A COMSET SEMICONDUCTORS 2/4 V mA V BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 Symbol VBE(SAT) Ratings Test Condition(s) Base-Emitter Voltage (*) IC=2.0 A, IB=0.25 A VCE=4 V, IC=1 A h21E Static Forward Current transfer ratio (*) VCE=4 V, IC=2 A Min Typ Mx Unit BDY23, 180T2 BDY24, 181T2 - - 2.0 1.2 BDY25, 182T2 A B C A B C - 15 30 75 55 65 90 20 45 82 1.2 45 90 100 - V - fT Transition Frequency VCE=15 V, IC=0.5 A, f=10 MHz BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 10 - - MHz t d + tr Turn-on time IC=5 A, IB=1 A BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 - 0.3 0.5 µs t s + tf Turn-off time IC=5 A, IB1=1 A, IB2=-0.5 A BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 - 1.5 2.0 µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% COMSET SEMICONDUCTORS 3/4 BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm inches 25,45 1 38,8 1,52 30,09 1,184 17,11 0,67 9,78 0,38 11,09 0,43 8,33 0,32 1,62 0,06 19,43 0,76 1 0,04 4,08 0,16 Base Emitter Collector COMSET SEMICONDUCTORS 4/4