BDX18 – BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Suitable for : Series and shunt regulators High Fidelity Amplifiers Power-switching circuits ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX18 BDX18N -60 V BDX18 BDX18N -70 -65 V -7 V VCEO Collector-Emitter Voltage VCER Collector-Emitter Voltage VEBO Collector-Emitter Voltage BDX18 BDX18N VCBO Emitter-Base Voltage BDX18 BDX18N VCEX Collector-Emitter Voltage IC Collector Current BDX18 BDX18N -15 A IB Base Current BDX18 BDX18N -7 A PT Power Dissipation BDX18 BDX18N 117 Watts TJ Junction Temperature TS Storage Temperature BDX18 BDX18N -65 to +200 °C RBE=100Ω VBE=+1.5 V @ TC = 25° COMSET SEMICONDUCTORS BDX18 BDX18N -100 -70 -90 -70 V V 1/3 BDX18 – BDX18N THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Value Unit 1.5 °C/W Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCEO(SUS) Collector-Emitter Breakdown Voltage (*) VCEX(SUS) Collector-Emitter Breakdown Voltage (*) VCER(SUS) Collector-Emitter Breakdown Voltage (*) ICEX Collector-Emitter Cutoff Current IC=200 mA, IB=0 Min Typ Mx Unit BDX18 BDX18N -60 -60 - - BDX18 -90 - - BDX18N -70 - - BDX18 -70 - - BDX18N -65 - - - - -5 V IC=-100 mA, VBE=1.5 V IC=-200 mA, RBE=100 Ω VCE=-90 V, VBE=1.5 V VCE=-60 V, VBE=1.5 V TCASE=150°C VCE=-70 V, VBE=1.5 V VCE=-60 V, VBE=1.5 V TCASE=150°C V BDX18 BDX18N -10 - - -5 - - -10 V mA IEBO Emitter-Base Cutoff Current VEB=-7 V BDX18 BDX18N - - -5 mA VBE Base-Emitter Voltage (*) BDX18 BDX18N - - -1.8 V VCE(SAT) Collector-Emitter Saturation IC=-4.0 A, IB=-0.4V Voltage BDX18 BDX18N - - -1.1 V fT Transition Frequency BDX18 BDX18N - 4 - MHz IC=-4.0 A, VCE=-4.0V IC =-1A, VCE=-10 V, f=1 MHz COMSET SEMICONDUCTORS 2/3 BDX18 – BDX18N Symbol Ratings Test Condition(s) Static Forward Current Transfer Ratio (*) h21E VCE=-4.0 V, IC=-4.0 A BDX18 BDX18N Min Typ Mx Unit 20 - 70 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector COMSET SEMICONDUCTORS 3/3 -