PNP 2N2907 – 2N2907A NPN 2N2222 – 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A . Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current PD Total Power Dissipation @ Tamb = 25° PD Total Power Dissipation @ Tcase= 25° TJ Junction Temperature TStg Storage Temperature range Value 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 Unit -60 -40 -60 -60 -5 -5 V V V -600 mA 0.4 Watts 1.8 Watts 200 °C -65 to +200 °C (1) Applicable up to IC = 500mA THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to ambient in free air RthJ-c Thermal Resistance, Junction to case COMSET SEMICONDUCTORS 2N2907A 2N2907 2N2907A 2N2907 Value Unit 350 K/W 146 K/W 1/3 PNP 2N2907 – 2N2907A NPN 2N2222 – 2N2222A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICBO Collector Cutoff Current ICBO Collector Cutoff Current ICEX Collector Cutoff Current VCEO VCBO VEBO VCB=-50 V, IE=0V VCB=-50 V, IE=0V VCB=-50 V, IE=0V, Tj=150°C VCB=-50 V, IE=0V, Tj=150°C VCE=-30 V, VBE=0.5V Collector Emitter Breakdown IC=-10 mA, IB=0 Voltage Collector Base Breakdown IC=-10 µA, IE=0 Voltage Emitter Base Breakdown IE=-10 µA, IC=0 Voltage IC=-0.1 mA, VCE=-10 V IC=-1 mA, VCE=-10 V hFE IC=-10 mA, VCE=-10 V DC Current Gain IC=-150 mA, VCE=-10 V IC=-500 mA, VCE=-10 V (1) VCE(SAT) VBE(SAT) Symbol fT Symbol Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) Ratings Transition frequency Ratings IC=-150 mA, IB=-15 mA IC=-500 mA, IB=-50 mA IC=-150 mA, IB=-15 mA IC=-500 mA, IB=-50 mA 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A -60 -40 2N2907 2N2907A -60 -60 2N2907 2N2907A -5 -5 2N2907 2N2907A 75 2N2907 2N2907A 100 2N2907 2N2907A 100 2N2907 2N2907A 100 2N2907 2N2907A 50 30 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 Test Condition(s) IC=-50 mA, VCE=-20 V f= 100MHz Delay time Rise time IC=-150 mA ,IB =-15 mA -VCC=-30 V CC Collector capacitance IE= Ie = 0 ,VCB=-10 V f = 100kHz CE Emitter capacitance IC= Ic = 0 ,VEB=-0.5 V f = 100kHz COMSET SEMICONDUCTORS 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 - -10 -20 -10 -20 - -50 - - - - - - - - - 300 - -0.4 -0.4 -1.6 -1.6 -1.3 -1.3 -2.6 -2.6 nA µA nA V V V - V Min Typ Mx Unit 2N2907A 200 200 2N2907 Test Condition(s) td tr Min Typ Mx Unit - - MHz Min Typ Mx Unit - - 10 40 ns - - 8 pF - - 30 pF 3/3 PNP 2N2907 – 2N2907A NPN 2N2222 – 2N2222A (1) Pulse conditions : tp < 300 µs, δ =2% MECHANICAL DATA CASE TO-18 DIMENSIONS mm A B D E F G H I L Pin 1 : Pin 2 : Pin 3 : 12,7 0,49 5,3 4,9 5,8 2,54 1,2 1,16 45° inches 0,5 0,019 0,208 0,193 0,228 0,1 0,047 0,045 45° Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3