MMBT2222A

MMBT2222A
SOT-23 Transistor(NPN)
SOT-23
1. BASE
2.EMITTER
3.COLLECTOR
Features
—
Epitaxial planar die construction
Complementary PNP Type available(MMBT2907A)
—
MARKING: 1P
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Value
Units
75
V
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
40
VEBO
Emitter-Base Voltage
6
IC
Collector Current -Continuous
600
PC
Collector Power Dissipation
350
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55to+150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
V
V
mA
mW
℃
℃
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 10μA, IE=0
75
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10mA, IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=60V, IE=0
10
nA
Collector cut-off current
ICEX
VCE=60V, VBE(off)=3V
10
nA
Emitter cut-off current
IEBO
VEB= 3V,IC=0
0.1
μA
hFE(1)
VCE=10V, IC=150mA
100
hFE(2)
VCE=10V, IC= 0.1mA
40
VCE=10V, IC= 500mA
42
DC current gain
hFE(3)
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
fT
Delay time
td
Rise time
tr
Storage time
tS
Fall time
tf
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
VCE=20V, IC= 20mA
f=100MHz
300
1
0.3
2.0
1.2
0.6
300
Range
V
MHz
VCC=30V, VBE(off)=-0.5V
IC=150mA , IB1= 15mA
10
nS
25
nS
VCC=30V, IC=150mA
IB1=-IB2=15mA
225
nS
60
nS
CLASSIFICATION OF hFE(1)
Rank
V
L
H
100-200
200-300
MMBT2222A
SOT-23 Transistor(NPN)
MMBT2222A
SOT-23 Transistor(NPN)