TI TS3A27518EIRTWRQ1

TS3A27518E-Q1
www.ti.com
SCDS311B – JANUARY 2010 – REVISED MAY 2012
6-BIT, 1-of-2 MULTIPLEXER/DEMULTIPLEXER WITH
INTEGRATED IEC L-4 ESD
AND 1.8-V LOGIC COMPATIBLE CONTROL INPUTS
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FEATURES
1
•
•
•
•
•
•
•
•
•
APPLICATIONS
•
•
•
SD/SDIO and MMC Two Port MUX
PC VGA Video MUX/Video Systems
Audio and Video Signal Routing
RTW PACKAGE
(TOP VIEW)
N.C.
NC1
NC2
IN1
NC3
NC6
Qualified for Automotive Applications
AEC-Q100 Qualified With the Following
Results:
– Device Temperature Grade 2: –40°C to
105°C Ambient Operating Temperature
Range
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C3B
1.65-V to 3.6-V Single-Supply Operation
Isolation in Powerdown Mode, V+ = 0
Low Capacitance Switches, 21.5 pF (Typical)
Bandwidth up to 240 MHz for High-Speed Railto-Rail Signal Handling
Crosstalk and Off Isolation of -62dB
1.8-V Logic Threshold Compatibility for
Control Inputs
3.6-V Tolerant Control Inputs
ESD Performance: NC/NO Ports
– ±6-kV Contact Discharge (IEC 61000-4-2)
24-Pin TSSOP (7,9-mm × 6,6-mm) and 24-Pin
QFN (4-mm × 4-mm) Package
24 23 22 21 20 19
COM1
GND
COM2
COM3
V+
COM4
1
18
2
17
3
16
4
15
5
14
6
13
7
8
NC4
EN
NC5
NO5
NO4
NO6
9 10 11 12
COM5
NO1
COM6
NO2
IN2
NO3
•
•
PW PACKAGE
(TOP VIEW)
NC2
NC1
N.C.
COM1
GND
COM2
COM3
V+
COM4
COM5
NO1
COM6
1
24
2
23
3
22
4
21
5
20
6
19
7
18
8
17
9
16
10
15
11
14
12
13
IN1
NC3
NC6
NC4
EN
NC5
NO5
NO4
NO6
NO3
IN2
NO2
N.C. – Not internally connected
DESCRIPTION
The TS3A27518E-Q1 is a 6-bit 1-of-2 mux/demux designed to operate from 1.65 V to 3.6 V. This device can
handle both digital and analog signals, and signals up to V+ can be transmitted in either direction. The
TS3A27518E-Q1 has two control pins, each controlling three 1-of-2 muxes at the same time, and an enable pin
that is used to put all outputs in high-impedance mode. The control pins are compatible with 1.8-V logic
thresholds and are backward compatible with 2.5-V and 3.3-V logic thresholds as well.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010–2012, Texas Instruments Incorporated
TS3A27518E-Q1
SCDS311B – JANUARY 2010 – REVISED MAY 2012
www.ti.com
DESCRIPTION (CONTINUED)
The TS3A27518E-Q1 allows any SD, SDIO, and multimedia card host controllers to be expanded out to multiple
cards or peripherals because the SDIO interface consists of 6-bits: CMD, CLK, and Data[0:3] signals. The
TS3A27518E-Q1 has two control pins that give additional flexibility to the user, for example, the ability to mux
two different audio-video signals in equipment such as an LCD television, an LCD monitor, or a notebook
docking station.
ORDERING INFORMATION
TA
PACKAGE
–40°C to 85°C
–40°C to 105°C
(1)
(2)
(1) (2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING
TSSOP – PW
Reel of 2000
TS3A27518EIPWRQ1
YL518EQ1
QFN – RTW
Reel of 3000
TS3A27518EIRTWRQ1
27518EI
QFN-RTW
Reel of 3000
TS3A27518ETRTWRQ1
27518T
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
For the most-current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com.
LOGIC DIAGRAM
Table 1. SUMMARY OF CHARACTERISTICS
V+ = 3.3 V, TA = 25°C
VCC
IN1
1-of-2
Multiplexer/Demultiplexer
Configuration
Logic
EN
IN2
Number of channels
NC1
6
ON-state resistance (ron)
6.2 Ω (max)
ON-state resistance match (Δron)
0.7 Ω (max)
ON-state resistance flatness
(rON(flat))
2.1 Ω (max)
NO1
NC4
Turn-on/turn-off time (tON/tOFF)
59 ns/ 60.6 ns (max)
COM1
NO4
Break-before-make time (tBBM)
22.7 ns (max)
COM4
Charge injection (QC)
NC2
NO2
NC5
COM2
NO5
0.81 pC
Bandwidth (BW)
COM5
240 MHz
OFF isolation (OISO)
–62 dB at 10 MHz
Crosstalk (XTALK)
–62 dB at 10 MHz
Total harmonic distortion (THD)
NC3
NO3
NC6
COM3
NO6
Power-supply current (I+)
< 0.3 μA (max)
24-pin QFN (RTW),
24-BGA (ZQS)
24-TSSOP (PW)
Package options
COM6
0.05%
GND
Table 2. FUNCTION TABLE
2
EN
IN1
IN2
NC1/2/3 TO COM1/2/3,
COM1/2/3 TO NC1/2/3
NC4/5/6 TO COM4/5/6,
COM4/5/6 TO NC4/5/6
NO1/2/3 TO COM1/2/3,
COM1/2/3 TO NO1/2/3
NO4/5/6 TO COM4/5/6,
COM4/5/6 TO NO4/5/6
H
X
X
OFF
OFF
OFF
OFF
L
L
L
ON
ON
OFF
OFF
L
H
L
OFF
ON
ON
OFF
L
L
H
ON
OFF
OFF
ON
L
H
H
OFF
OFF
ON
ON
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TS3A27518E-Q1
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SCDS311B – JANUARY 2010 – REVISED MAY 2012
SDIO EXPANDER APPLICATION BLOCK DIAGRAM
VCC
VCC
VCC
NC1
COM1
NO1
NC2
COM2
NO2
NC3
COM3
NO3
SD/MMC
Memory Card
NC4
SDIO Port
COM4
NO4
NC5
COM5
NO5
NC6
COM6
NO6
Digital
Baseband or
Apps Processor
IN1, IN2, EN
VCC
TS3A27518
SDIO Peripheral
(Bluetooth,
WLAN, DTV, etc)
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TS3A27518E-Q1
SCDS311B – JANUARY 2010 – REVISED MAY 2012
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ABSOLUTE MINIMUM AND MAXIMUM RATINGS (1)
(2)
over operating free-air temperature range (unless otherwise noted)
(3)
MIN
MAX
–0.5
4.6
V
–0.5
4.6
V
V+
Supply voltage range
VNC
VNO
VCOM
Analog voltage range (3)
IK
Analog port diode current (6)
V+ < VNC, VNO, VCOM < 0
–50
INC
INO
ICOM
ON-state switch current (7)
VNC, VNO, VCOM = 0 to V+
–50
50
VI
Digital input voltage range (3)
–0.5
4.6
(4) (5)
(4)
(3) (4)
IIK
Digital input clamp current
I+
Continuous current through V+
IGND
Continuous current through GND
Tstg
Storage temperature range
VIO < VI < 0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
mA
–50
mA
V
mA
100
–100
mA
mA
–65
Human-body model (HBM) AEC-Q100
Classification Level H2
ESD rating
UNIT
Charged-device model (CDM) AEC-Q100
Classification Level C3B
150
°C
2
kV
750
V
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
Requires clamp diodes on analog port to V+.
Pulse at 1-ms duration <10% duty cycle
THERMAL IMPEDANCE RATINGS
UNIT
(1)
PW package
Package thermal impedance (1)
θJA
87.9
RTW
66
°C/W
The package thermal impedance is calculated in accordance with JESD 51-7.
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (1)
V+ = 3 V to 3.6 V, TA = –40°C to 105°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
ON-state
resistance
ON-state
resistance match
between channels
ON-state
resistance
flatness
(1)
4
VCOM,
VNO, VNC
ron
Δron
ron(flat)
0
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 15
VNC or VNO = 2.1 V,
ICOM = –32 mA,
Switch ON,
See Figure 15
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 16
25°C
Full
3V
25°C
Full
4.4
6.2
7.6
0.3
3V
25°C
Full
V+
0.95
Ω
0.7
0.8
3V
Ω
Ω
2.1
2.3
Ω
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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TS3A27518E-Q1
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SCDS311B – JANUARY 2010 – REVISED MAY 2012
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY(1) (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 105°C (unless otherwise noted)
PARAMETER
SYMBOL
INC(OFF),
INO(OFF)
NC, NO
OFF leakage
current
INC(PWROFF),
INO(PWROFF)
ICOM(OFF)
COM
OFF leakage
current
ICOM(PWROFF)
NC, NO
ON leakage
current
COM
ON leakage
current
INO(ON),
INC(ON)
ICOM(ON)
TEST CONDITIONS
VNC or VNO = 1 V,
VCOM = 3 V,
or
VNC or VNO = 3 V,
VCOM = 1 V,
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
or
VNC or VNO = 3.6 V to 0,
VCOM = 0 to 3.6 V,
VNC or VNO = 3 V,
VCOM = 1 V,
or
VNC or VNO = 1 V,
VCOM = 3 V,
VNC or VNO = 3.6 V to 0,
VCOM = 0 to 3.6 V,
or
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
TA
V+
25°C
Full
Switch OFF,
See Figure 16
3.6 V
25°C
Full
Switch OFF,
See Figure 16
0V
3.6 V
Switch ON,
See Figure 17
VNC or VNO = Open,
VCOM = 1 V,
or
VNC or VNO = Open,
VCOM = 3 V,
Switch ON,
See Figure 17
–40°C
to 85°C
0V
–7
3.6 V
25°C
3.6 V
0.05
1
μA
12
0.01
–2
1
2
0.02
–12
1
μA
12
0.04
2.2
–7
7
–7.5
7.5
–2
UNIT
7
–12
–2.5
85°C to
105°C
Full
0.5
–1
25°C
VNC or VNO = 1 V,
VCOM = Open,
or
VNC or VNO = 3 V,
VCOM = Open,
MAX
0.05
–1
25°C
Full
TYP
–1
25°C
Full
MIN
–0.5
0.03
μA
2
μA
–7
7
1.2
3.6
V
0.65
V
Digital Control Inputs (IN1, IN2, EN) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage current
IIH, IIL
Full
3.6 V
Full
3.6 V
25°C
VI = V+ or 0
Full
3.6 V
0
–0.1
0.05
–2.5
0.1
2.5
μA
Dynamic
25°C
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
–40°C
to 85°C
85°C to
105°C
25°C
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
–40°C
to 85°C
85°C to
105°C
3.3 V
18.1
59
60
3 V to 3.6 V
ns
68
3.3 V
25.4
60.6
61
3 V to 3.6 V
ns
70
25°C
3.3 V
Full
3 V to 3.6 V
CL = 0.1 nF,
See Figure 24
25°C
3.3 V
0.81
pC
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
3.3 V
13
pF
CCOM(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
3.3 V
8.5
pF
NC, NO
ON capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
3.3 V
21.5
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 18
25°C
3.3 V
21.5
pF
Break-beforemake time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 20
Charge injection
QC
VGEN = 0,
RGEN = 0,
NC, NO
OFF capacitance
CNC(OFF),
CNO(OFF)
COM
OFF capacitance
(2)
4
11.1
22.7
28
ns
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY(1) (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 105°C (unless otherwise noted)
PARAMETER
Digital input
capacitance
SYMBOL
CI
TEST CONDITIONS
TA
V+
MIN
TYP
VI = V+ or GND
See Figure 18
25°C
3.3 V
2
MAX
UNIT
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
3.3 V
240
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 22
25°C
3.3 V
–62
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
3.3 V
–62
dB
XTALK(ADJ)
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
3.3 V
–71
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 25
25°C
3.3 V
0.05
%
Crosstalk adjacent
Total harmonic
distortion
Supply
25°C
Positive
supply current
I+
VI = V+ or GND,
Switch ON or OFF
–40°C
to 85°C
0.04
0.3
3
3.6 V
85°C to
105°C
μA
5
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 105°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
ON-state
resistance
ON-state
resistance match
between channels
ON-state
resistance
flatness
VCOM,
VNO, VNC
ron
Δron
ron(flat)
INC(OFF),
INO(OFF)
NC, NO
OFF leakage
current
INC(PWROFF),
INO(PWROFF)
ICOM(OFF)
COM
OFF leakage
current
ICOM(PWROFF)
NC, NO
ON leakage
current
COM
ON leakage
current
(1)
6
0
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 15
VNC or VNO = 1.6 V,
ICOM = –32 mA,
Switch ON,
See Figure 15
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 16
VNC or VNO = 0.5 V,
VCOM = 2.3 V,
or
VNC or VNO = 2.3 V,
VCOM = 0.5 V,
VNC or VNO = 0 to 2.7 V,
VCOM =2.7 V to 0,
or
VNC or VNO = 2.7 V to 0,
VCOM = 0 to 2.7 V,
VNC or VNO = 0.5 V,
VCOM = 2.3 V,
or
VNC or VNO = 2.3 V,
VCOM = 0.5 V,
VNC or VNO = 2.7 V to 0,
VCOM = 0 to 2.7 V,
or
VNC or VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,
25°C
Full
Full
0.3
2.3 V
0.91
2.3 V
2.7 V
25°C
Full
25°C
Full
INO(ON),
INC(ON)
VNC or VNO = 0.5 V or 2.3
V,
VCOM = Open,
Switch ON,
See Figure 17
ICOM(ON)
VNC or VNO = Open,
VCOM = 0.5 V,
or
VNC or VNO = Open,
VCOM = 2.3 V,
Switch ON,
See Figure 17
2.7 V
0V
25°C
Full
25°C
Full
2.7 V
0.02
0.3
0.6
μA
0.7
1
0.02
0.7
μA
7.2
0.03
–6
–2
Ω
10
–7.2
–2.1
2.7 V
0.02
–1
–0.7
Ω
6
–10
–0.7
25°C
Full
–6
–0.6
0V
0.04
Ω
2.2
2.3
–0.3
Ω
0.8
0.9
25°C
Full
9.6
11.5
25°C
Full
Switch OFF,
See Figure 16
5.5
2.3 V
25°C
Switch OFF,
See Figure 16
V+
2.1
6
0.02
–5.7
μA
2
5.7
μA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY(1) (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 105°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Full
2.7 V
1.15
3.6
V
Full
2.7 V
0
0.55
V
Digital Control Inputs (IN1, IN2, EN) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage current
VI = V+ or GND
IIH, IIL
VI = V+ or 0
tON
VCOM = V+,
RL = 50 Ω,
25°C
Full
2.7 V
-0.1
0.01
–2.1
0.1
2.1
μA
Dynamic
Turn-on time
Turn-off time
tOFF
CL = 35 pF,
See Figure 19
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
25°C
2.5 V
Full
2.3 V to 2.7 V
25°C
2.5 V
–40°C
to 85°C
85°C to
105°C
17.2
36.8
42.5
17.1
ns
29.8
34.4
2.3 V to 2.7 V
ns
38.4
25°C
2.5 V
Full
2.3 V to 2.7 V
CL = 0.1 nF,
See Figure 24
25°C
2.5 V
0.47
pC
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
2.5 V
13.5
pF
CCOM(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
2.5 V
9
pF
NC, NO
ON capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
2.5 V
22
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 18
25°C
2.5 V
22
pF
VI = V+ or GND
See Figure 18
25°C
2.5 V
2
pF
Break-beforemake time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 20
Charge injection
QC
VGEN = 0,
RGEN = 0,
NC, NO
OFF capacitance
CNC(OFF),
CNO(OFF)
COM
OFF capacitance
Digital input
capacitance
CI
4.5
13
30
33.3
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
2.5 V
240
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 22
25°C
2.5 V
–62
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
2.5 V
–62
dB
XTALK(ADJ)
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
2.5 V
–71
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 25
25°C
2.5 V
0.06
%
Crosstalk adjacent
Total harmonic
distortion
Supply
25°C
Positive
supply current
I+
VI = V+ or GND,
Switch ON or OFF
–40°C
to 85°C
0.01
2
2.7 V
85°C to
105°C
(2)
0.1
μA
3
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 105°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
ON-state
resistance
(1)
VCOM,
VNO, VNC
ron
0
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 15
25°C
Full
1.65 V
V+
7.1
14.4
16.3
Ω
Ω
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY(1) (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 105°C (unless otherwise noted)
PARAMETER
ON-state
resistance match
between channels
ON-state
resistance
flatness
SYMBOL
VNC or VNO = 1.5 V,
ICOM = –32 mA,
Switch ON,
See Figure 15
ron(flat)
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 16
INC(OFF),
INO(OFF)
VNC or VNO = 0.3 V,
VCOM = 1.65 V,
or
VNC or VNO = 1.65 V,
VCOM = 0.3 V
Δron
NC, NO
OFF leakage
current
INC(PWROFF),
INO(PWROFF)
ICOM(OFF),
ICOM(OFF)
COM
OFF leakage
current
ICOM(PWROFF),
ICOM(PWROFF)
NC, NO
ON leakage
current
COM
ON leakage
current
TEST CONDITIONS
VNC or VNO = 1.95 V to 0,
VCOM = 0 to 1.95 V,
or
VNC or VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,
VNC or VNO = 0.3 V,
VCOM = 1.65 V,
or
VNC or VNO = 1.65 V,
VCOM = 0.3 V
VNC or VNO = 1.95 V to 0,
VCOM = 0 to 1.95 V,
or
VNC or VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,
TA
V+
2.7
Full
1.95 V
25°C
1.95 V
25°C
0V
85°C to
105°C
25°C
ICOM(ON)
VNC or VNO = Open,
VCOM = 0.3 V,
or
VNC or VNO = Open,
VCOM = 1.65 V,
Switch ON,
See Figure 17
1.95 V
25°C
–5.8
5.8
1.95 V
0.02
–5.2
μA
μA
2
5.2
0.02
μA
0.4
5
–2
Full
0.9
0.02
μA
0.4
–5
–2
Full
0.02
Ω
0.4
7.2
–0.9
–0.4
–40°C
to 85°C
0.01
Ω
0.25
5
–7.2
–0.4
Full
Switch ON,
See Figure 17
–5
–0.4
0V
0.03
UNIT
5.5
7.3
–0.25
25°C
VNC or VNO = 0.3 V,
VCOM = Open,
or
VNC or VNO = 1.65 V,
VCOM = Open,
1
1.65 V
Full
INO(ON),
INC(ON)
MAX
0.3
1.2
25°C
Full
Switch OFF,
See Figure 16
TYP
1.65 V
Full
25°C
Switch OFF,
See Figure 16
MIN
25°C
μA
2
–5.2
5.2
μA
Digital Control Inputs (IN1, IN2, EN) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage current
VI = V+ or GND
IIH, IIL
VI = V+ or 0
tON
VCOM = V+,
RL = 50 Ω,
Full
1.95 V
1
3.6
V
Full
1.95 V
0
0.4
V
25°C
1.95 V
Full
-0.1
0.01
-2.1
0.1
2.1
μA
Dynamic
Turn-on time
Turn-off time
tOFF
CL = 35 pF,
See Figure 19
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
25°C
1.8 V
Full
1.65 V to 1.95
V
25°C
1.8 V
–40°C
to 85°C
85°C to
105°C
56.7
16.1
26.5
31.2
1.65 V to 1.95
V
ns
ns
35.2
1.8 V
Full
1.65 V to 1.95
V
CL = 1 nF,
See Figure 24
25°C
1.8 V
0.21
pC
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
1.8 V
9
pF
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
1.8 V
22
pF
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 20
Charge injection
QC
VGEN = 0,
RGEN = 0,
NC, NO
OFF capacitance
CNC(OFF),
CNO(OFF)
NC, NO
ON capacitance
CNC(ON),
CNO(ON)
8
49.3
25°C
Break-beforemake time
(2)
14.1
5.3
18.4
58
58
ns
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY(1) (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 105°C (unless otherwise noted)
PARAMETER
COM
ON capacitance
Digital input
capacitance
SYMBOL
CCOM(ON)
CI
TEST CONDITIONS
TA
V+
See Figure 18
25°C
1.8 V
22
pF
VI = V+ or GND
See Figure 18
25°C
1.8 V
2
pF
VCOM = V+ or GND,
Switch ON,
MIN
TYP
MAX
UNIT
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
1.8 V
240
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 22
25°C
1.8 V
-60
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
1.8 V
-60
dB
XTALK(ADJ)
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
1.8 V
-71
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 25
25°C
1.8 V
0.1
%
Crosstalk adjacent
Total harmonic
distortion
Supply
25°C
Positive
supply current
I+
VI = V+ or GND,
Switch ON or OFF
–40°C
to 85°C
85°C to
105°C
0.01
1.95 V
0.1
1.5
2.5
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Table 3. PARAMETER DESCRIPTION
SYMBOL
VCOM
VNC
Voltage at NC
VNO
Voltage at NO
ron
Δron
ron(flat)
Resistance between COM and NC or NO ports when the channel is ON
Difference of ron between channels in a specific device
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state
INC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NC or NO) in the OFF state
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NC or NO) in the ON state and the
output (NC or NO) open
VIH
Minimum input voltage for logic high for the control input (IN, EN)
VIL
Maximum input voltage for logic low for the control input (IN, EN)
VI
Voltage at the control input (IN, EN)
IIH, IIL
Leakage current measured at the control input (IN, EN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output NC or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (NC or NO) signal when the switch is turning OFF.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC or NO)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(OFF)
Capacitance at the NC port when the corresponding channel (NO to COM) is OFF
CNO(ON)
Capacitance at the NC port when the corresponding channel (NO to COM) is ON
CCOM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NC) is OFF
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NC) is ON
CI
Capacitance of control input (IN, EN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC1 to NO1). Adjacent
crosstalk is a measure of unwanted signal coupling from an ON channel to an adjacent ON channel (NC1 to NC2) .This is
measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
I+
10
DESCRIPTION
Voltage at COM
Static power-supply current with the control (IN) pin at V+ or GND
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TYPICAL CHARACTERISTICS
7
8
7
ON-State Resistance, rON (W)
ON-State Resistance, rON (W)
6
5
4
3
2
6
5
4
3
85ºC
2
85ºC
1
25ºC
25ºC
1
-–40ºC
–40ºC
0
0
0.0
0.5
1.0
1.5
2.0
COM Voltage, VCOM (V)
2.5
3.0
0.0
3.5
Figure 1. ON-State Resistance vs COM Voltage (V+ = 3 V)
0.5
1.0
1.5
COM Voltage, VCOM (V)
2.0
2.5
Figure 2. ON-State Resistance vs COM Voltage (V+ = 2.3 V)
600
12
550
500
Leakage Current, II (nA)
ON-State Resistance, rON (W)
10
8
6
4
85ºC
COM (OFF)
450
COM (ON)
400
NO (OFF)
NO (ON)
350
300
250
200
150
25ºC
2
100
-–40ºC
50
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
COM Voltage, VCOM (V)
1.4
1.6
1.8
Figure 3. ON-State Resistance vs COM Voltage (V+ = 1.65
V)
0
–40
25
Temperature, TA (°C)
85
Figure 4. Leakage Current vs Temperature (V+ = 3.3 V)
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TYPICAL CHARACTERISTICS (continued)
45
4.0
40
3.5
35
Output Voltage, VOUT (V)
Supply Current, I+ (nA)
3.0
30
25
20
15
10
2.5
2.0
1.5
1.0
5
INx = High
0
INx = Low
–5
0.0
0.5
1.0
1.5
2.0
2.5
Supply Voltage, V+ (V)
3.0
3.5
0.5
0.0
0.0
4.0
Figure 5. Supply Current vs Supply Voltage
0.4
0.6
0.8
1.0
1.2
Input Voltage, VIN (V)
–10
–10
–20
–20
1.6
2.0
1.8
–30
–40
Magnitude (dB)
–40
–50
–60
–50
–60
–70
1.8 V
–70
–80
2.5 V
–80
NO1TOCOM1-NO2
3.3 V
NO1TOCOM1-NO3
–90
NO1TOCOM1-NO4
NO1TOCOM1-NO5
–90
–100
NO1TOCOM1-NO6
0.1
–100
0.1
1
10
Frequency (MHz)
100
1
10
Frequency (MHz)
100
1000
1000
Figure 7. Crosstalk Adjacent
12
1.4
Figure 6. Control Input Thresholds (IN1, TA = 25°C)
–30
Magnitude (dB)
0.2
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Figure 8. Crosstalk
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SCDS311B – JANUARY 2010 – REVISED MAY 2012
TYPICAL CHARACTERISTICS (continued)
0.11
–10
–20
–30
0.09
Magnitude (dB)
Total Harmonic Distortion, THD (%)
0.10
1.8 V
2.5 V
0.08
3.3 V
–40
–50
–60
–70
0.07
1.8 V
–80
0.05
0.1
2.5 V
3.3 V
0.06
–90
–100
1
10
Frequency (Hz)
100
0.1
1000
1
Figure 9. Total Harmonic Distortion vs Frequency
10
Frequency (MHz)
100
1000
Figure 10. OFF Isolation
1
0
–2
0
–4
–1
Charge Injection, QC (pC)
Magnitude (dB)
–6
–8
–10
–12
1.8 V
–14
–3
–4
–5
2.5 V
–16
–2
3.3 V
–6
–18
–7
–20
0.1
1
10
Frequency (MHz)
100
Figure 11. Insertion Loss
1000
0
0.3
0.6
0.9
1.2
Bias Voltage (V)
1.5
1.8
Figure 12. Charge Injection vs Bias Voltage (1.8 V)
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TYPICAL CHARACTERISTICS (continued)
2
4
2
0
Charge Injection, QC (pC)
Charge Injection, QC (pC)
0
–2
–4
–6
–2
–4
–6
–8
–10
–12
–8
–14
–10
–16
0
0.3
0.6
0.9
1.5
1.8
1.2
Bias Voltage (V)
2.1
2.4
2.5
Figure 13. Charge Injection vs Bias Voltage (2.5 V)
14
0
0.3
0.6
0.9
1.2
1.5 1.8 2.1 2.4
Bias Voltage (V)
2.4
2.7
3.0
3.3
Figure 14. Charge Injection vs Bias Voltage (3.3 V)
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SCDS311B – JANUARY 2010 – REVISED MAY 2012
PARAMETER MEASUREMENT INFORMATION
+
Ω
IN
+
Figure 15. ON-state Resistance (rON)
+
+
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
IN
+
Figure 16. OFF-State Leakage Current
(ICOM(OFF), INC(OFF), ICOM(PWROFF), INC(PWROFF))
ON-State Leakage Current
Channel ON
VI = VIH or VIL
+
IN
+
Figure 17. ON-State Leakage Current
(ICOM(ON), INC(ON))
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PARAMETER MEASUREMENT INFORMATION (continued)
VNO
NO
Capacitance
Meter
VBIAS = V+ or GND and
VI = VIH or VIL
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
COM COM
VBIAS
Figure 18. Capacitance
(CI, CCOM(OFF), CCOM(ON), CNC(OFF), CNC(ON))
A.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B.
CL includes probe and jig capacitance.
TEST
RL
CL
VCOM
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
IN
Logic
Intput
(VI)
tON
tOFF
90%
Switch
Output
(VNO)
90%
Figure 19. Turn-On (tON) and Turn-Off Time (tOFF)
16
A.
CL includes probe and jig capacitance.
B.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
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PARAMETER MEASUREMENT INFORMATION (continued)
VNC or VNO
NC or NO
NC or NO
VOH
VNC or VNO = V+/2
RL = 50 Ω
CL = 35 pF
Figure 20. Break-Before-Make Time (tBBM)
Channel ON: NO to COM
VI = VIH or VIL
50 Ω
Network Analyzer Setup
IN
Ω
+
Source Power = 0 dBM
(632-mV P-P at 50-Ω load)
DC Bias = 350 mV
Figure 21. Bandwidth (BW)
Channel OFF: NO to COM
VI = VIH or VIL
50 Ω
Ω
Network Analyzer Setup
IN
Ω
+
Source Power = 0 dBM
(632-mV P-P at 50-Ω load)
DC Bias = 350 mV
Figure 22. OFF Isolation (OISO)
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PARAMETER MEASUREMENT INFORMATION (continued)
50 Ω
VNC
NC
VNO
NO
Channel ON: NC to COM
Channel OFF: NO to COM
VI = VIH or VIL
Network Analyzer Setup
Ω
Source Power = 0 dBM
(632-mV P-P at 50-Ω load)
DC Bias = 350 mV
IN
Ω
+
Figure 23. Crosstalk (XTALK)
A.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B.
CL includes probe and jig capacitance.
Δ
IN
xΔ
Figure 24. Charge Injection (QC)
A.
18
CL includes probe and jig capacitance.
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PARAMETER MEASUREMENT INFORMATION (continued)
Channel ON: COM to NO
VSOURCE = V+ P-P
VI = VIH or VIL
fSOURCE = 20 Hz to 20 kHz
RL = 600 Ω
CL = 50 pF
V+/2
Audio Analyzer
NO
600 Ω
COM
IN
+
600 Ω
–V+/2
Figure 25. Total Harmonic Distortion (THD)
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REVISION HISTORY
Changes from Revision A (March 2012) to Revision B
Page
•
Changed device temp grade from 1 to 2, removed maximum withstand voltage info, changed C3B2 to C3B. .................. 1
•
Added extra row to ordering information table. ..................................................................................................................... 2
•
Changed TA = –40°C to 85°C to TA = –40°C to 105°C ......................................................................................................... 4
•
Changed Full to –40°C to 85°C and added extra row with 85°C to 105°C and limits -7.5 to 7.5 ........................................ 5
•
Changed TA = –40°C to 85°C to TA = –40°C to 105°C ......................................................................................................... 5
•
Changed Full to –40°C to 85°C and added extra row with 85°C to 105°C with limits 68 .................................................... 5
•
Changed Full to –40°C to 85°C and added extra row with 85°C to 105°C with limits 70 .................................................... 5
•
Changed TA = –40°C to 85°C to TA = –40°C to 105°C ......................................................................................................... 6
•
Changed Full to –40°C to 85°C and added extra row with 85°C to 105°C with limits 5 µA ................................................. 6
•
Changed TA = –40°C to 85°C to TA = –40°C to 105°C ......................................................................................................... 6
•
Changed Full to –40°C to 85°C and added extra row with 85°C to 105°C with limits 38.4 ................................................. 7
•
Changed TA = –40°C to 85°C to TA = –40°C to 105°C ......................................................................................................... 7
•
Changed Full to –40°C to 85°C and added extra row with 85°C to 105°C with limits 3 ...................................................... 7
•
Changed TA = –40°C to 85°C to TA = –40°C to 105°C ......................................................................................................... 7
•
Changed Full to –40°C to 85°C and added extra row with 85°C to 105°C and limits –5.8 to 5.8 ........................................ 8
•
Changed TA = –40°C to 85°C to TA = –40°C to 105°C ......................................................................................................... 8
•
Changed Full to –40°C to 85°C and added extra row with 85°C to 105°C with limits 35.2 ................................................. 8
•
Changed TA = –40°C to 85°C to TA = –40°C to 105°C ......................................................................................................... 9
•
Changed Full to –40°C to 85°C and added extra row with 85°C to 105°C with limits 2.5 ................................................... 9
20
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PACKAGE OPTION ADDENDUM
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28-Aug-2012
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
TS3A27518EIPWRQ1
ACTIVE
TSSOP
PW
24
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
TS3A27518EIRTWRQ1
ACTIVE
WQFN
RTW
24
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
TS3A27518ETRTWRQ1
ACTIVE
WQFN
RTW
24
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
Samples
(Requires Login)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TS3A27518E-Q1 :
• Catalog: TS3A27518E
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
28-Aug-2012
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
28-Aug-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TS3A27518EIPWRQ1
TSSOP
PW
24
2000
330.0
16.4
6.95
8.3
1.6
8.0
16.0
Q1
TS3A27518EIRTWRQ1
WQFN
RTW
24
3000
330.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
TS3A27518ETRTWRQ1
WQFN
RTW
24
3000
330.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
28-Aug-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TS3A27518EIPWRQ1
TSSOP
PW
24
2000
367.0
367.0
38.0
TS3A27518EIRTWRQ1
WQFN
RTW
24
3000
367.0
367.0
35.0
TS3A27518ETRTWRQ1
WQFN
RTW
24
3000
367.0
367.0
35.0
Pack Materials-Page 2
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