LED - Chip ELС-525-31-2 26.05.2008 rev. 02 Radiation Technology Electrodes Green InGaN/Al2O3 Both on top side typ. dimensions (µm) typ. thickness 100 (±10) µm p and n contact gold alloy backside metalization gold alloy Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 3.2 V Forward voltage IF = 20 mA VF 2.8 Forward voltage1 IF = 350 mA VF 3.6 Reverse voltage IR = 10 µA VR 5 Radiant power1 IF = 350 mA Φe 80 110 mW Luminous intensity1) IF = 20 mA ΙV 750 850 mcd Luminous intensity1) IF = 350 mA ΙV 7500 9000 mcd Peak wavelength IF = 350 mA λP 505 515 525 nm Dominant wavelength IF = 350 mA λD 515 525 535 nm Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 35 nm Switching time IF = 20 mA tr, tf 50 ns 1) V V Measured on bare chip with EPIGAP equipment Labeling Type Lot N° Ιv(typ) [mcd] VF(typ) [V] Quantity ELС-525-31-2 Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1