EPIGAP ELC-572-13

LED - Chip
ELC-572-13
Preliminary
10.04.2007
rev. 03/06
Radiation
Type
Technology
Electrodes
Yellow-green
Standard
AlInGaP/GaAs
P (anode) up
typ. dimensions (µm)
265
110
typ. thickness
260 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
dotted, 25% covered
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
2.0
2.4
V
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
5
Radiant power1
IF = 20 mA
Φe
0.09
Radiant power2
IF = 20 mA
Φe
Luminous intensity1
IF = 20 mA
Iv
Luminous intensity2
IF = 20 mA
Iv
Peak wavelength
IF = 20 mA
λp
Dominant wavelength
IF = 20 mA
λD
572
nm
Spectral bandwidth at 50%
IF = 20 mA
∆λ0.5
15
nm
Switching time
IF = 20 mA
tr, tf
30/20
ns
1
2
V
12
568
0.12
mW
0.23
mW
20
mcd
38
mcd
572
577
nm
Measured on bare chip on TO-18 header with EPIGAP equipment
Measured on epoxy covered chip on TO-18 header with EPIGAP equipment
Labeling
Type
Lot N°
Iv(typ) [mcd]
VF(typ) [V]
Quantity
ELС-572-13
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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