LED - Chip ELC-572-13 Preliminary 10.04.2007 rev. 03/06 Radiation Type Technology Electrodes Yellow-green Standard AlInGaP/GaAs P (anode) up typ. dimensions (µm) 265 110 typ. thickness 260 (±20) µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm dotted, 25% covered Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 2.0 2.4 V Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR 5 Radiant power1 IF = 20 mA Φe 0.09 Radiant power2 IF = 20 mA Φe Luminous intensity1 IF = 20 mA Iv Luminous intensity2 IF = 20 mA Iv Peak wavelength IF = 20 mA λp Dominant wavelength IF = 20 mA λD 572 nm Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 15 nm Switching time IF = 20 mA tr, tf 30/20 ns 1 2 V 12 568 0.12 mW 0.23 mW 20 mcd 38 mcd 572 577 nm Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° Iv(typ) [mcd] VF(typ) [V] Quantity ELС-572-13 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1