LED - Chip ELС-645-13 21.11.2007 rev. 06 Radiation Type Technology Electrodes Red Standard AlInGaP/GaAs P (anode) up typ. dimensions (µm) 265 110 typ. thickness 260 (±20) µm cathode gold alloy, 0.5 µm anode gold alloy, 1.5 µm Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 1.9 2.3 V Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR 5 1 IF = 20 mA Φe 1.2 2 Radiant power IF = 20 mA Φe Luminous intensity1 IF = 20 mA Ιv Luminous intensity2 IF = 20 mA Ιv Peak wavelength IF = 20 mA λP Dominant wavelength IF = 20 mA λD 632 nm Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 18 nm Switching time IF = 20 mA tr, tf 15 ns Radiant power 1 2 V 40 635 2.0 mW 4.0 mW 70 mcd 140 mcd 645 655 nm Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° ΙV(typ) [mcd] VF(typ) [V] Quantity ELС-645-13 Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545