LED - Chip ELС-619-14 22.05.2008 rev. 05 Radiation Type Technology Electrodes Red-orange Standard AlInGaP/GaAs P (anode) up typ. dimensions (µm) 310 Ø120 typ. thickness 260 (±20) µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm LED-02 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 2.0 2.4 V Forward voltage IF = 20 mA VF 1.6 Reverse voltage IR = 10 µA VR 5 Radiant power1 IF = 20 mA Φe 1.4 Luminous intensity2 IF = 20 mA IV Peak wavelength IF = 20 mA λP 610 619 630 nm Dominant wavelength2 IF = 20 mA λD 600 612 630 nm Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 10 20 30 nm Switching time IF = 20 mA tr, tf 15 20 30 ns V 1.8 2.5 mW 100 1 measured on bare chip on TO-18 header with EPIGAP equipment 2 for infomation only mcd Labeling Type Lot N° ΙV(typ) [mcd] VF(typ) [V] Quantity ELС-619-14 Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1