LED - Chip ELС-655-21-05 Preliminary 10.04.2007 rev. 02/06 Radiation Type Technology Electrodes Red-orange solderable AlInGaP/GaAs N (cathode) up typ. dimensions (µm) 1000 typ. thickness 250 (±20) µm 1000 cathode gold alloy, 1.5 µm anode gold alloy, 1.5 µm PoC-05 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 2.2 V Forward voltage IF = 20 mA VF 1.7 Forward voltage IF = 100 mA VF 1.9 Reverse voltage IF = 10 µA VR 5 Radiant power1 IF = 20 mA Φe 0.95 Radiant power1 IF = 100 mA Φe Luminous intensity1 IF = 100 mA ΙV Peak wavelength IF = 100 mA λp Spectral bandwidth at 50% IF = 100 mA ∆λ0.5 20 nm Switching time IF = 100 mA tr, tf 40/30 ns 1 V V 1.2 mW 6.0 mW 140 180 mcd 645 655 665 nm Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Lot N° Type Φe(typ) [mW] VF(typ) [V] Quantity ELС-655-21-05 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1