LED - Chip ELС-645-11-05 Preliminary 10.04.2007 rev. 02/06 Radiation Type Technology Electrodes Red-orange solderable AlInGaP/GaAs P (anode) up typ. dimensions (µm) 1000 typ. thickness 260 (±20) µm 1000 cathode gold alloy, 1.5 µm anode gold alloy, 1.5 µm PoC-05 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 2.3 V Forward voltage IF = 100 mA VF 1.9 Forward voltage IF = 300 mA VF 2.1 Reverse voltage IF = 10 µA VR 5 Radiant power1 IF = 100 mA Φe 4.6 Radiant power1 IF = 300 mA Φe Luminous intensity1 IF = 100 mA ΙV Peak wavelength IF = 100 mA λp Spectral bandwidth at 50% IF = 100 mA ∆λ0.5 16 nm Switching time IF = 100 mA tr, tf 40 ns 1 V V 6.0 mW 16 mW 225 290 mcd 635 645 655 nm Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Lot N° Type Φe(typ) [mW] VF(typ) [V] Quantity ELС-645-11-05 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1