LED - Lamp ELD-540-095 16.11.2007 rev. 02 Radiation Type Technology Case Green Standard AlInGaN/Al2O3 TO-39 Description Ø 7,55 ± 0,08 High-power green LED-Chip on TO-39 package without covering Ø 5,08 0,45 ± 0,04 1,25 chip location Ø 9,00 1 Note: Special packages without standoff available on request 13,46 Applications ± 0,75 0, 8 0 2 45,0 0° Customer-specific LED-component Pin 1 - Cathode Pin 2 - Anode Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Test сonditions Symbol Value Unit IF 100 mA IFM 800 mA PD 300 mW Operating temperature range Tamb -40 to +110 °C Storage temperature range Tstg -40 to +110 °C Junction temperature TJ 120 °C Typ Max Unit VF 2.6 3.3 V 2.9 Forward current (DC) (tP ≤ 50 µs, tP /T = 1/2) Peak forward current Power dissipation Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions IF = 20 mA Forward voltage Symbol Min Forward voltage* IF = 100 mA VF Reverse voltage IR = 10 µA VR 5 Radiant power IF = 20 mA Φe 3.6 Radiant power* IF = 100 mA Φe Luminous intensity IF = 20 mA Ιv Luminous intensity* IF = 100 mA Ιv Peak wavelength IF = 100 mA λp Dominant wavelength IF = 100 mA λD 540 nm Spectral bandwidth at 50% IF = 100 mA ∆λ0.5 40 nm Viewing angle IF = 100 mA ϕ 120 deg. Switching time *for information only IF = 100 mA tr, tf 45 ns Note: All measurements carried out on EPIGAP equipment 340 520 V V 5.2 mW 19.5 mW 490 mcd 1880 mcd 530 540 nm We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545