Photodiode-Chip EPC-525-0.9-1 Preliminary 26.04.2007 rev. 09/07 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P (anode) up typ. dimensions (µm) 860 typ. thickness gold alloy, 1.5 µm Description Narrow bandwidth and high spectral sensitivity in the range of max. eye responsivity (480..560 nm), low cost chip cathode Applications gold alloy, 0.5 µm Nearly V גmatched detection, measurement systems, daylight sensors 270 (±20) µm anode PD-08 Ø120 Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Parameter Test сonditions Symbol Value Unit A 0.73 mm² Operating temperature range Tamb -40 to +125 °C Storage temperature range Tstg -40 to +125 °C Active area Temperature coefficient of I D T = -40…120°C TC(ID) 4.7 %/K Temperature coefficient of I PH T = -40…120°C TC(IPh) 0.25 %/K Temperature coefficient of λc T = -40…120°C TC(λc) 0.15 nm/K Typ Max Unit 5 30 pA Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions VR = 5 V Dark current Symbol Min ID Responsivity at 525 nm 1) VR = 0 V Sλ 0.04 0.08 A/W Responsivity at 525 nm 2) VR = 0 V Sλ 0.15 0.3 A/W Peak sensitivity wavelength VR = 0 V λp 525 nm Sensitivity range at 1% 1) VR = 0 V λmin, λmax Spectral bandwidth at 50% VR = 0 V ∆λ0.5 70 VR = 10 mV RD 350 Dark resistance 1) 410 580 nm nm GΩ -14 WHz 1/2 λ = 525 nm NEP Junction capacitance VR = 0 V CJ 100 pF Switching time (RL = 50 Ω) VR = 1 V tr , t f 35 ns Noise equivalent power 1.6x10 1) Measured on bare chip on TO-18 header Measured on epoxy covered chip on TO-18 header 2) Labeling Type Typ. ID [pA] Typ. Sλ[A/W] Lot N° Quantity EPС-525-0.9-1 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode-Chip EPC-525-0.9-1 Preliminary 26.04.2007 Responsivity spectrum rev. 09/07 Relative Photocurrent vs. Temperature 1,30 1,0 UR = 5V TK = 0,25%/K 1,20 0,8 1,15 Relative Photocurrent Sensitivity (arb. units) 1,25 0,6 0,4 0,2 1,10 1,05 1,00 0,95 0,90 0,85 0,0 0,80 400 450 500 550 600 Wavelength [nm] -40 -20 0 20 40 60 80 100 120 Temperature (°C) Dark Current vs. Temperature 100 UR = 5V TK = 1,05 times/K Dark Current (pA) 10 1 0,1 -40 -20 0 20 40 60 80 100 120 Temperature (°C) EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2