EIC1010A-8 10.00-10.25 GHz 8-Watt Internally Matched Power FET UPDATED 07/20/2005 FEATURES • • • • • • • • 10.00– 10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at Po = 28 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. PARAMETERS/TEST CONDITIONS1 SYMBOL Output Power at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 2200mA Gain Flatness f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 2200mA P1dB G1dB ∆G PAE Id1dB Drain Current at 1dB Compression IM3 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28 dBm S.C.L2 VDS = 9 V, IDSQ ≈ 65% IDSS f = 10.25 GHz IDSS Saturated Drain Current VP Pinch-off Voltage MAX 38.0 39.0 dBm 6.5 7.5 dB % 2300 -43 2600 -46 VDS = 3 V, IDS = 40 mA -2.5 -4.0 3.5 SYMBOL mA dBc 5000 ABSOLUTE MAXIMUM RATING dB 31 4000 2.) S.C.L. = Single Carrier Level. UNITS ±0.5 VDS = 3 V, VGS = 0 V Thermal Resistance Note: 1.) Tested with 100 Ohm gate resistor. TYP f = 10.00-10.25GHz 3 RTH MIN 4.0 mA V o C/W 3.) Overall Rth depends on case mounting. 1,2 CHARACTERISTIC VALUE VDS Drain to Source Voltage 10 V VGS Gate to Source Voltage -4.5 V IDS Drain Current IDSS IGSF Forward Gate Current 80 mA PIN Input Power PT Total Power Dissipation 38 W TCH Channel Temperature 175°C TSTG Storage Temperature -65/+175°C @ 3dB compression Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised July 2005 EIC1010A-8 10.00-10.25 GHz 8-Watt Internally Matched Power FET UPDATED 07/20/2005 PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 9 V, IDSQ ≈ 2200mA S11 and S22 S[1,1] * EIC1010A-8 5 0 3. S21 and S12 (dB) 0. 4 S[2,2] * EIC1010A-8 0 4. 5.0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10. 0 0 S21 and S12 10 2. 0 6 0. 0.8 1.0 Swp Max 10.5GHz 0 DB(|S[2,1]|) * EIC1010A-8 -5 DB(|S[1,2]|) * EIC1010A-8 -10 -10 .0 2 -0. -15 -4 .0 -5. 0 -3 .0 FREQ (GHz) 9.750 9.875 10.000 10.125 10.250 10.375 10.500 -20 9.75 9.875 Swp Min 9.75GHz -1.0 -0. 8 .0 -2 4 -0 .6 . -0 10 10.125 10.25 Frequency (GHz) 10.375 10.5 --- S11 --MAG ANG --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG 0.335 0.252 0.171 0.133 0.166 0.228 0.292 2.652 2.697 2.711 2.715 2.679 2.631 2.561 0.116 0.120 0.124 0.124 0.123 0.124 0.122 0.465 0.450 0.411 0.379 0.339 0.301 0.268 -56.33 -76.92 -106.57 -155.37 156.13 124.27 103.20 129.33 114.11 98.91 83.63 68.11 52.77 38.07 84.60 70.15 54.94 39.56 24.26 10.00 -5.08 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com 13.82 -0.78 -15.94 -31.58 -48.49 -67.38 -86.62 page 2 of 4 Revised July 2005 EIC1010A-8 10.00-10.25 GHz 8-Watt Internally Matched Power FET UPDATED 07/20/2005 Power De-rating Curve and IM3 Definition Power Dissipation vs. Temperature THIRD-ORDER INTERCEPT POINT IP3 40 30 IP3 = Pout + IM3/2 Potentially Unsafe Operating Region 25 20 Safe Operating Region 15 f1 or f2 Pout [S.C.L.] (dBm) Total Power Dissipation (W 35 Pout IM3 Pin IM3 (2f1-f2) f1 f2 (2f2-f1) f1 f2 10 (2f2 - f1) or (2f1 - f2) 5 0 0 25 50 75 100 125 Case Temperature (°C) 150 175 Pin [S.C.L.] (dBm) Typical Power Data (VDS = 9 V, IDSQ = 2200 mA) P-1dB & G-1dB vs Frequency 40 IM3 vs Output Power 12 38 P-1dB (dBm) G-1dB (dB) 10 37 9 36 8 35 9.6 9.8 10.0 10.2 Frequency (GHz) 10.4 7 10.6 IM3 (dBc) 11 G-1dB (dB) P-1dB (dBm) 39 Typical IM3 Data (VDS = 9 V, IDSQ ≈ 65% IDSS) f1 = 10.25 GHz, f2 = 10.26 GHz -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 IM3 (dBc) 20 21 22 23 24 25 26 27 28 29 30 31 32 33 Pout [S.C.L.] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised July 2005 EIC1010A-8 UPDATED 07/20/2005 10.00-10.25 GHz 8-Watt Internally Matched Power FET PACKAGE OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified Excelics EIC1010A-8 YYWW SN ORDERING INFORMATION Part Number Grade1 fTest (GHz) P1dB (min) IM3 (min)2 EIC1010A-8 Industrial 10.00-10.25 GHz 38.0 -43 Notes: 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in “Electrical Characteristics” table. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised July 2005