EIC1010A-12 10.0-10.25 GHz 12-Watt Internally Matched Power FET ISSUED: 07/24/2007 Excelics FEATURES • • • • • • .024 EIC1010A-12 .827±.010 .669 10.0-10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Output Power at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Gain Flatness f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA MIN TYP MAX 39.5 40.5 dBm 6.0 7.0 dB ±0.5 f = 10.0-10.25GHz % Drain Current at 1dB Compression IM3 Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L Vds = 9 V, IDSQ ≈ 65% IDSS f = 10.25GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 5800 7200 VP Pinch-off Voltage VDS = 3 V, IDS = 58 mA -2.5 -4.0 RTH dB 30 Id1dB 3300 -40 3 Thermal Resistance 3700 2) S.C.L. = Single Carrier Level. mA dBc -43 2.3 Note: 1) Tested with 50 Ohm gate resistor. UNITS mA V o 2.6 C/W 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4V Forward Gate Current 130mA 43mA PARAMETERS Reverse Gate Current -21mA -7mA Input Power 40.0dBm @ 3dB Compression Channel Temperature 175 C 175 C Storage Temperature o -65 to +175 C -65 to +175 oC Total Power Dissipation 57W 57W o o Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised July 2007 EIC1010A-12 ISSUED: 07/24/2007 10.0-10.25 GHz 12-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised July 2007