EIC7177-10 7.10-7.70 GHz 10-Watt Internally-Matched Power FET FEATURES • • • • • • • • 7.10 – 7.70 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 9 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at Po = 29.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC7177-10 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.10-7.70GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 7.10-7.70GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 7.10-7.70GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3200mA f = 7.10-7.70GHz Drain Current at 1Db Compression f = 7.10-7.70GHz IM3 Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 7.70 GHz IDSS Saturated Drain Current VP Pinch-off Voltage RTH Thermal Resistance 3 MIN TYP MAX UNITS 39.5 40.5 dBm 8.0 9.0 dB ±0.6 dB 35 3200 -43 % 3600 -46 dBc VDS = 3 V, VGS = 0 V 5800 6400 VDS = 3 V, IDS = 60 mA -2.5 -4.0 2.5 mA 3.0 mA V o C/W Notes: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised October 2003 EIC7177-10 ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 10 V VGS Gate to Source Voltage -4.5 V IDS Drain Current IGSF Forward Gate Current IDSS PIN Input Power PT Total Power Dissipation 42 W TCH Channel Temperature 150°C TSTG Storage Temperature -65/+150°C 120 mA @ 3dB compression Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN). PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 3200mA S11 and S22 S21 and S12 10 2. 0 0. 6 0. 8 1.0 Swp Max 7.9GHz 0 4 4. 0 5.0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 -10. 0 2 -0 . .0 6.5 6.7 6.9 7.1 7.3 7.5 7.7 7.9 8.1 8.3 8.5 DB(|S[1,2]|) EIC7177-10 -10 -20 .0 -2 -1.0 -0.8 .6 -0 --- S11 --MAG ANG 0.7175 0.6394 0.54 0.4059 0.2293 0.0747 0.2466 0.4397 0.583 0.6761 0.7392 DB(|S[2,1]|) EIC7177-10 -3 FREQ (GHz) 0 -4 .0 -5.0 S[1,1]0.4 EIC7177-10 S[2,2] EIC7177-10 S21 and S12 (dB) 0. 3. -118.04 -138.29 -161.16 172.55 138.08 37.07 -62.75 -98.59 -126.77 -150.57 -171.1 6.9 Swp Min 6.9GHz --- S21 --MAG ANG 2.3853 2.5751 2.7688 2.9473 3.0573 3.0519 2.8762 2.5317 2.1134 1.7287 1.3981 -7.81 -32.99 -59.03 -86.83 -116.9 -148.09 179.32 147.48 117.67 91.05 66.41 7.1 7.3 7.5 Frequency (GHz) --- S12 --MAG ANG 0.0894 0.0982 0.1091 0.1214 0.1304 0.135 0.1302 0.1164 0.0983 0.0833 0.0708 -64.67 -88.45 -114.52 -141.21 -170.74 158.19 126.14 95.19 66.91 40.52 18.29 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com 7.7 7.9 --- S22 --MAG ANG 0.3979 0.4476 0.4847 0.4996 0.4755 0.4083 0.3168 0.261 0.2876 0.3632 0.4355 134.6 105.78 78.66 51.55 22.06 -11.96 -54.79 -109.71 -160.97 165.41 143.08 page 2 of 4 Revised October 2003 EIC7177-10 Power De-rating Curve and IM3 Definition Power Dissipation vs. Temperature THIRD-ORDER INTERCEPT POINT IP3 48 36 IP3 = Pout + IM3/2 Potentially Unsafe Operating Region 30 24 Safe Operating Region 18 f1 or f2 Pout [S.C.L.] (dBm) Total Power Dissipation (W) 42 Pout IM3 Pin IM3 f1 f2 (2f1-f2) f1 f2 (2f2-f1) 12 (2f2 - f1) or (2f1 - f2) 6 0 25 50 75 100 Case Temperature (°C) 125 150 Pin [S.C.L.] (dBm) Typical Power Data (VDS = 10 V, IDSQ = 3200 mA) P-1dB & G-1dB vs Frequency 41 11 40 10 39 9 38 8 P-1dB (dBm) G-1dB (dB) 37 7 7.0 7.1 7.2 7.3 7.4 7.5 Frequency (GHz) 7.6 IM3 vs Output Power 12 7.7 7.8 G-1dB (dB) P-1dB (dBm) 42 Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS) IM3 (dBc) 0 f1 = 7.40 GHz, f2 = 7.41 GHz -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 IM3 (dBc) 24 25 26 27 28 29 30 31 32 33 34 35 36 Pout [S.C.L.] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised October 2003 EIC7177-10 PACKAGE OUTLINE SOURCE Dimensions in inches, Tolerance + .005 unless otherwise specified Excelics EIC7177-10 YM SN ORDERING INFORMATION Part Number Grade1 fTest (GHz) P1dB (min) IM3 (min)2 EIC7177-10 Industrial 7.1-7.7 GHz 39.5 -43 Notes: 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in “Electrical Characteristics” table. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised October 2003