EIC7678-25 7.60-7.80 GHz 25-Watt Internally Matched Power FET UPDATED 07/23/2008 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • 7.60– 7.80GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH Excelics EIC7678-25 0.945 0.024 0.803 0.580 YYWW SN 0.315 0.055 0.685 0.010 0.168 0.617 0.004 0.158 0.095 0.055 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. PARAMETERS/TEST CONDITIONS1) SYMBOL P1dB G1dB ∆G PAE Output Power at 1dB Compression f = 7.60-7.80GHz VDS = 10 V, IDSQ ≈ 6500mA Gain at 1dB Compression f = 7.60-7.80GHz VDS = 10 V, IDSQ ≈ 6500mA Gain Flatness f = 7.60-7.80GHz VDS = 10 V, IDSQ ≈ 6500mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 6500mA f = 7.60-7.80GHz Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V VP Pinch-off Voltage VDS = 3 V, IDS = 130 mA RTH MIN TYP MAX 43.5 44.5 dBm 7.5 8.5 dB ±0.6 dB 30 f = 7.60-7.80GHz 2) Thermal Resistance % 6800 7700 mA 11 13 A -2.5 -4.0 1.3 Note: 1) Tested with 50 Ohm gate resistor. UNITS V o 1.6 C/W 2) Overall Rth depends on case mounting. MAXIMUM RATING AT 25°C1,2 SYMBOLS Vds Vgs Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage ABSOLUTE1 CONTINUOUS2 15 10V Gate-Source Voltage -5 -4V Input Power 38.5 dBm @ 3dB Compression Channel Temperature 175 oC 175 oC Storage Temperature -65 to +175 oC -65 to +175 oC Total Power Dissipation 93W 93W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised July 2008 EIC7678-25 7.60-7.80 GHz 25-Watt Internally Matched Power FET UPDATED 07/23/2008 S-PARAMETERS Measured at Vds=10V, IDSQ=6500mA G1dB vs Frequency 47 12 46 10 45 8 G 1d B /d B m P 1d B /d B m P1dB vs Frequency 44 6 43 4 42 2 41 7.55 7.6 7.65 7.7 7.75 Freq/GHz 7.8 7.85 0 7.55 7.6 7.65 7.7 7.75 7.8 7.85 Freq/GHz Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised July 2008