EIC1314-12 13.75-14.50 GHz 12-Watt Internally Matched Power FET ISSUED 10/17/2008 FEATURES • • • • • • • 13.75– 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 23% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH Excelics .024 EIC1314-12 .827±.010 .669 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G IMD3 PAE Output Power at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 4200mA Gain at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 4200mA Gain Flatness f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈4200mA Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 29.0 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 14.50 GHz Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 4200mA f = 13.75-14.50GHz Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V VP Pinch-off Voltage VDS = 3 V, IDS = 62 mA RTH MIN TYP 40.5 41 dBm 5 6 dB -42 f = 13.75-14.50GHz Thermal Resistance dB -45 dBc 23 % 4200 4800 mA 8 10 A -2.5 -4.0 1.8 2) S.C.L. = Single Carrier Level. UNITS ±0.6 3 Note: 1) Tested with 50 Ohm gate resistor. MAX 2.0 V o C/W 3) Overall Rth depends on case mounting. MAXIMUM RATING AT 25°C1,2 SYMBOLS Vds Vgs Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4V Input Power 38dBm @ 3dB Compression PARAMETERS Channel Temperature o 175 oC 175 C o Storage Temperature -65 to +175 C -65 to +175 oC Total Power Dissipation 75W 75W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 3 Revised October 2008 EIC1314-12 13.75-14.50 GHz 12-Watt Internally Matched Power FET ISSUED 10/17/2008 Gain@1dB compression v.s Frequency Output Power v.s Frequency 44 9.6 8.4 42 7.2 Gain/dB Power/dBm 40 38 6 4.8 3.6 36 2.4 34 32 13.5 1.2 13.7 13.9 14.1 14.3 14.5 14.7 0 13.5 13.7 13.9 14.1 14.3 14.5 14.7 Frequency/GHz Frequency/ GHz P1dB v.s Frequency G1dB v.s Frequency Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 4200mA Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 3 Revised October 2008 EIC1314-12 13.75-14.50 GHz 12-Watt Internally Matched Power FET ISSUED 10/17/2008 THIRD-ORDER INTERCEPT POINT IP3 100 80 Pout [S.C.L.] (dBm) IP3 = Pout + IM3/2 60 40 20 f1 or f2 Pout IM3 0 50 100 150 IM3 Pin f1 f2 0 (2f1-f2) f1 f2 (2f2-f1) (2f2 - f1) or (2f1 - f2) 200 Case Temperature / °C Pin [S.C.L.] (dBm) IM3 v.s Output Power f1=14.5 GHz, f2=14.49 GHz -20 -30 -40 IM3 / dBc Total Power Dissipation / W Power Dissipation v.s Temperature -50 -60 -70 -80 13 16 19 22 25 28 31 Pout (S.C.L) / dBm Typical IMD3 Data (T= 25°C) VDS = 10 V, IDSQ ≈ 65% IDss Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 3 Revised October 2008