EXCELICS EIC7785-4

EIC7785-4
7.70-8.50GHz 4-Watt Internally-Matched Power FET
UPDATED 08/21/2007
FEATURES
•
•
•
•
•
•
•
7.70–8.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
34% Power Added Efficiency
-46 dBc IM3 at PO = 25.5 dBm SCL
100% Tested for DC, RF, and RTH
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
IDSS
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 7.70-8.50GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain Flatness
f = 7.70-8.50GHz
VDS = 10 V, IDSQ ≈ 1100mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1100mA
f = 7.70-8.50GHz
Drain Current at 1dB Compression f = 7.70-8.50GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 8.50GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP
Pinch-off Voltage
SYMBOL
P1dB
G1dB
∆G
PAE
Id1dB
IM3
TYP
35.5
36.5
dBm
7.5
8.5
dB
MAX
UNITS
±0.6
dB
34
1100
-43
VDS = 3 V, IDS = 20 mA
Thermal Resistance
RTH
MIN
3
%
1300
mA
-46
dBc
2000
2500
-2.5
-4.0
5.5
mA
V
o
6.0
C/W
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
Vds
Vgs
Igf
Igr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE1
CONTINUOUS2
15V
10V
-5V
-4V
48mA
14.4mA
-9.6mA
-2.4mA
36dBm
@ 3dB Compression
175C
175C
-65C to +175C
-65C to +175C
25W
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007
EIC7785-4
7.70-8.50GHz 4-Watt Internally-Matched Power FET
UPDATED 08/21/2007
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package)
VDS = 10 V, IDSQ ≈ 1100mA
S11 and S22
10
0.
4
0
3.
S21 and S12 (dB)
0
4.
5. 0
0. 2
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
10 .0
0
S21 and S12
20
2.
0
6
0.
0. 8
1.0
Swp Max
8.7GHz
0
DB(|S[2,1]|)
EIC7785-4
-10
DB(|S[1,2]|)
EIC7785-4
-1 0. 0
2
-0 .
-1.0
-0 .8
--- S11 ---
-30
.0
-2
-0
.6
FREQ
S[2,2]
EIC7785-4
-3
.0
.4
-0
-20
-4
.0
-5 .
0
S[1,1]
EIC7785-4
7.5
7.8
Swp Min
7.5GHz
--- S21 ---
8.1
Frequency (GHz)
--- S12 ---
8.4
8.7
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
7.5
0.6034
-149.14
2.6409
-81.54
0.0862
-138.31
0.5314
32.49
7.6
0.5516
-159.75
2.7534
-93.4
0.0948
-149.69
0.5287
20.36
7.7
0.4935
-172.49
2.8842
-105.71
0.1006
-161.26
0.5183
7.57
7.8
0.4264
173.09
2.9901
-118.6
0.1076
-174.38
0.5005
-6.22
7.9
0.3594
156.04
3.0911
-132.17
0.1154
172.85
0.4752
-21.19
8
0.29
135.54
3.152
-146.09
0.1203
159.84
0.4444
-37.73
8.1
0.2323
109.56
3.1785
-159.96
0.1233
146.34
0.4117
-56.07
8.2
0.1942
77.04
3.1614
-174.31
0.1262
132.54
0.3812
-75.72
8.3
0.1858
42.24
3.0973
171.66
0.1277
118.21
0.3633
-96.19
8.4
0.2013
9.94
3.0181
157.94
0.1256
105.29
0.3511
-117.08
8.5
0.2311
-14.73
2.9014
144.33
0.1242
92.6
0.3517
-137.38
8.6
0.2635
-35.41
2.7724
131.4
0.1232
79.73
0.3594
-155.44
8.7
0.2953
-51.98
2.6626
119.31
0.1178
66.75
0.3726
-171.45
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised October 2007
EIC7785-4
7.70-8.50GHz 4-Watt Internally-Matched Power FET
UPDATED 08/21/2007
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
THIRD-ORDER
INTERCEPT POINT IP3
30
IP3 = Pout + IM3/2
Potentially Unsafe
Operating Region
20
15
Safe Operating
Region
10
f1 or f2
Pout [S.C.L.] (dBm)
Total Power Dissipation (W)
25
Pout
IM3
Pin
IM3
(2f1-f2) f1 f2 (2f2-f1)
f1 f2
(2f2 - f1) or (2f1 - f2)
5
0
25
50
75
100
125
Case Temperature (°C)
150
175
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 1100 mA)
P-1dB & G-1dB vs Frequency
37
11
36
10
35
9
34
8
P-1dB (dBm)
G-1dB (dB)
33
7
7.6
7.8
8.0
8.2
Frequency (GHz)
8.4
IM3 vs Output Power
12
8.6
G-1dB (dB)
P-1dB (dBm)
38
Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS)
IM3 (dBc)
0
f1 = 8.50 GHz, f2 = 8.51 GHz
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
IM3 (dBc)
20
21
22
23
24
25
26
27
28
29
30
31
32
33
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised October 2007
EIC7785-4
7.70-8.50GHz 4-Watt Internally-Matched Power FET
UPDATED 08/21/2007
PACKAGES OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
EIC7785-4 (Hermetic)
Excelics
EIC7785-4NH (Non-Hermetic)
Excelics
.024
EIC7785-4
.827±.010 .669
EIC7785-4NH
.421
.120 MIN
.120 MIN
YYWW
YYWW
SN
SN
.004
.125
.063
.508±.008
.442
.168±.010
.004
.105±.008
ALL DIMENSIONS IN INCHES
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
Caution! ESD sensitive device.
ORDERING INFORMATION
Part Number
Packages
Grade1
fTest (GHz)
P1dB (min)
IM3 (min)2
EIC7785-4
Hermetic
Industrial
7.70-8.50GHz
35.5
-43
EIC7785-4NH
Non-Hermetic
Industrial
7.70-8.50GHz
35.5
-43
Notes:
1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in “Electrical Characteristics” table.
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the
body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 4 of 4
Revised October 2007