EIC5972-12 5.90-7.20 GHz 12-Watt Internally Matched Power FET UPDATED 11/10/2006 Excelics FEATURES • • • • • • • • EIC5972-12 5.90– 7.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 36% Power Added Efficiency -46 dBc IM3 at Pout = 30.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 945 .803 .079 MIN .079 MIN YYWW SN .315 .685 .617 .004 .168 .095 .055 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Caution! ESD sensitive device. Output Power at 1dB Compression f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200mA MIN TYP MAX 40.5 41.5 dBm 8.0 9.0 dB ±0.8 IM3 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 30.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 7.20GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 6000 7500 VP Pinch-off Voltage VDS = 3 V, IDS = 60 mA -2.5 -4.0 3400 -43 3 Thermal Resistance o MAXIMUM RATING AT 25 C SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt f = 5.90-7.20GHz % Drain Current at 1dB Compression 2) S.C.L. = Single Carrier Level. 3800 mA -46 2.5 Note: 1) Tested with 50 Ohm gate resistor. dB 36 Id1dB RTH UNITS dBc 3.0 mA V o C/W 3) Overall Rth depends on case mounting. 1,2 PARAMETERS ABSOLUTE CONTINUOUS 15 10V Drain-Source Voltage Gate-Source Voltage -5 -4V Forward Gate Current 129.6mA 43.2mA Reverse Gate Current -21.6mA -7.2mA Input Power 40.5dBm @ 3dB Compression Channel Temperature o 175 oC 175 C o Storage Temperature -65 to +175 C -65 to +175 oC Total Power Dissipation 50W 50W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 EIC5972-12 UPDATED 11/10/2006 5.90-7.20 GHz 12-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006