EIC4450-15 4.40-5.00GHz 15-Watt Internally Matched Power FET ISSUED: 03/30/2009 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • • Excelics 0.945 0.803 0.580 YYWW SN 0.315 G1dB ∆G PAE 0.168 0.617 0.010 0.004 0.158 0.095 0.055 Caution! ESD sensitive device. PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 4500mA Gain at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 4500mA Gain Flatness f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 4500mA Power Added Efficiency at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 4500mA P1dB 0.055 0.685 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL 0.024 EIC4450-15 4.40– 5.00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at Po = 31 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH MIN TYP MAX 41 42 dBm 9.5 10.5 dB ±0.7 dB 31 % Id1dB Drain Current at 1dB Compression IM3 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 31 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 5.00GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 9000 13000 VP Pinch-off Voltage VDS = 3 V, IDS = 84 mA -2.5 -4.0 f = 4.40-5.00GHz 4500 -43 3 RTH UNITS Thermal Resistance 5100 mA -46 1.8 dBc mA V o 2.1 C/W Note: 1. Tested with 30 Ohm gate resistor, forward and reverse gate current should nopt exceed 35mA and -5.1mA respectively. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING SYMBOLS PARAMETERS Pin Drain-Source Voltage Gate-Source Voltage Input Power Tch Tstg Pt Channel Temperature Storage Temperature Total Power Dissipation (Tc=25°) Vds Vgs 1 ABSOLUTE OPERATING 15V 10V 2 -5V -4V Output power reach 3dB Gain Compression point Output power reach 3dB Gain Compression point 175°C 175°C -65°C to +175°C -65°C to +175°C 71W 71W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 3 Version. 01 EIC4450-15 4.40-5.00GHz 15-Watt Internally Matched Power FET ISSUED: 03/30/2009 PERFORMANCE DATA 20 S(2,2) S(1,1) dB(S(1,2)) dB(S(2,1)) 10 0 -10 -20 -30 4.0 4.3 S11 MAG 0.735 0.651 0.548 0.443 0.355 0.293 0.255 0.228 0.202 0.178 0.165 ANG -59.2 -81.1 -106.7 -136.2 -169.2 155.4 121.6 88.7 57.4 22.1 -22.1 4.9 5.2 freq, GHz freq (4.000GHz to 5.500GHz) Frequency GHz 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5 4.6 S21 MAG 3.207 3.636 3.977 4.195 4.255 4.184 4.087 3.961 3.855 3.774 3.682 ANG 91.5 70.1 47.4 24.1 1.0 -21.1 -41.9 -61.8 -81.4 -100.9 -120.7 S12 MAG 0.046 0.056 0.063 0.069 0.074 0.077 0.078 0.079 0.080 0.081 0.082 ANG 32.0 10.1 -13.9 -37.0 -60.4 -82.8 -104.4 -124.9 -145.0 -164.5 175.0 S22 MAG 0.376 0.318 0.277 0.270 0.283 0.307 0.325 0.336 0.337 0.329 0.310 ANG -50.2 -79.4 -114.1 -151.3 175.4 148.5 127.5 109.1 93.0 76.8 59.4 Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 4500mA Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 3 Version. 01 5.5 EIC4450-15 4.40-5.00GHz 15-Watt Internally Matched Power FET ISSUED: 03/30/2009 G1dB v.s Frequency 43 14 39 12 35 10 G1dB/dB P1dB/dBm P1dB v.s.Frequency 31 8 6 27 4 23 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5 5.1 4.2 Frequency/GHz 4.4 4.6 4.8 5 5.2 Frequency/GHz VDS = 10 V, IDSQ ≈ 4500mA DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 3 Version. 01