EID1112A1-8 11.70-12.70 GHz 8-Watt Internally Matched Power FET UPDATED 07/12/2007 FEATURES • 11.70-12.70 GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +39.5 dBm Output Power at 1dB Compression • 8.0 dB Power Gain at 1dB Compression • 35% Power Added Efficiency • Hermetic Metal Flange Package • 100% Tested for DC, RF, and RTH Excelics .024 EID1112A1-8 .827±.010 .669 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Caution! ESD sensitive device. 1 PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH Thermal Resistance f = 11.70-12.70GHz MIN TYP MAX UNITS 38.5 39.5 dBm 7.0 8.0 dB ±0.6 dB 35 % 2800 3200 mA VDS = 3 V, VGS = 0 V 4400 5200 mA VDS = 3 V, IDS = 40 mA -1.2 -2.5 V 3.5 4.0 3 o C/W Notes: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 10 V VGS Gate to Source Voltage -3.0 V IDS Drain Current IDSS IGSF Forward Gate Current 80 mA PIN Input Power PT Total Power Dissipation 32 W TCH Channel Temperature 150°C TSTG Storage Temperature -65/+150°C @ 3dB compression Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised July 2007 EID1112A1-8 UPDATED 07/12/2007 11.70-12.70 GHz 8-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised July 2007