EID1416A1-8 14.0-16.0GHz 8-Watt Internally-Matched Power FET UPDATED 09/20/2007 FEATURES • • • • • • 14.0-16.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 27% Power Added Efficiency 100% Tested for DC, RF, and RTH Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.0-16.0GHz VDS = 10V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 14.0-16.0GHz VDS = 10V, IDSQ ≈ 2200mA Gain Flatness f = 14.0-16.0GHz VDS = 10V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 14.0-16.0GHz VDS = 10V, IDSQ ≈ 2200mA Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH Thermal Resistance2 MIN TYP MAX UNITS 38.5 39.5 dBm 5.0 6.0 dB ±0.6 dB 27 f = 14.0-16.0GHz % 2800 3600 mA VDS = 3 V, VGS = 0 V 4200 5760 mA VDS = 3 V, IDS = 40 mA -1.2 -2.5 V 3.5 4.0 o C/W Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 15V 10V Vgs Gate-Source Voltage -5V -4V Igf Forward Gate Current 96mA 28.8mA Igr Reverse Gate Current -19.2mA -4.8mA Pin Input Power 38.5dBm @ 3dB Compression Tch Channel Temperature 175C 175C Tstg Storage Temperature -65C to +175C -65C to +175C Pt Total Power Dissipation 38W 38W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised October 2007 EID1416A1-8 14.0-16.0GHz 8-Watt Internally-Matched Power FET UPDATED 09/20/2007 PACKAGES OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified EID1416A1-8 (Hermetic) Excelics EID1416A1-8 YYWW SN ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. ORDERING INFORMATION Notes: Part Number Packages Grade1 fTest (GHz) P1dB (min) EID1416S1-8 Hermetic Industrial 14.0-16.0GHz 38.5 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in “Electrical Characteristics” table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised October 2007