EIC1213-8 12.75-13.25 GHz 8-Watt Internally Matched Power FET ISSUED 3-19-09 FEATURES • • • • • • • Excelics 12.75– 13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 28% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 EIC1213-8 .827±.010 .669 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G IMD3 PAE Output Power at 1dB Compression f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈2200mA Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 13.25 GHz Power Added Efficiency at 1dB Compression f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈ 2200mA Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH MIN TYP MAX 38.5 39 dBm 5.5 6.5 dB ±0.6 -41 f = 12.75-13.25GHz dB -45 dBc 28 % 2200 2600 mA VDS = 3 V, VGS = 0 V 3.8 4.6 A VDS = 3 V, IDS = 40 mA -2.5 -4.0 3 Thermal Resistance 3.5 Note: 1) Tested with 50 Ohm gate resistor. UNITS 2) S.C.L. = Single Carrier Level. V o 3.8 C/W 3) Overall Rth depends on case mounting. 1,2 MAXIMUM RATING AT 25°C SYMBOLS Vds Vgs Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4V PARAMETERS Input Power 35dBm @ 3dB Compression Channel Temperature 175 oC 175 oC Storage Temperature -65 to +175 oC -65 to +175 oC Total Power Dissipation 39.5W 39.5W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revision A1 EIC1213-8 ISSUED 3-19-09 12.75-13.25 GHz 8-Watt Internally Matched Power FET PACKAGE OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified Excelics EIC1213-8 YYWW SN DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revision A1