EIB3439-4P 3.40-3.90 GHz 4W Internally Matched Power FET UPDATED 03/02/2006 FEATURES • • • • • • .120 MIN 3.40-3.90 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 12.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency Non-Hermetic Metal Flange Package Excelics .120 MIN .020 EIC3439-4P .827 .669 .400 YYWW SN SN .126 .161 .508 .450 .004 .052 .105 .084 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Caution! ESD sensitive device. PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 3.40-3.90GHz VDS = 8 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 3.40-3.90GHz VDS = 8 V, IDSQ ≈ 1600mA Gain Flatness f = 3.40-3.90GHz VDS = 8 V, IDSQ ≈ 1600mA Power Added Efficiency at 1dB Compression f = 3.40-3.90GHz VDS = 8 V, IDSQ ≈ 1600mA Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH Thermal Resistance2 MIN TYP MAX UNITS 35.5 36.5 dBm 11.0 12.0 dB ±0.6 dB 30 1700 2000 mA VDS = 3 V, VGS = 0 V 2800 3500 mA VDS = 3 V, IDS = 28 mA -2.0 -3.5 V 5.5 6.0 Note: 1) Tested with 100 Ohm gate resistor. f = 3.40-3.90GHz % o C/W 2) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOL CHARACTERISTIC ABSOLUTE1 CONTINUOUS2 VDS Drain to Source Voltage 12 V 8V VGS Gate to Source Voltage -6.0 V -4.0 V IGSF Forward Gate Current 43.2 mA 14.4 mA IGSR Reserve Gate Current -7.2 mA -2.4 mA PIN Input Power 36.5 dBm @ 3dB compression TCH Channel Temperature 175°C 175°C TSTG Storage Temperature -65/+175°C -65/+175°C 25 W 25 W PT Total Power Dissipation Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised March 2006