HD3SS6126 www.ti.com SLAS975 – NOVEMBER 2013 USB 3.0 and USB 2.0 Differential Switch 2:1/1:2 MUX/DEMUX Check for Samples: HD3SS6126 FEATURES DESCRIPTION • The HD3SS6126 is a high speed passive switch that is designed for USB applications to route both SuperSpeed USB RX and TX and USB 2.0 DP/DM signals from a source to two destination or viceversa. It can also be used for DisplayPort, PCI Express, SATA, SAS, and XAUI applications. The HD3SS6126 can be used in either sink side or source side applications. • • • • • • • spacer spacer spacer NoteBook USB 3 Rx USB 3 Tx USB 2 DP / DM HD3SS6126 • Ideal for USB Applications – Signal Switch for USB 3.0 (SuperSpeed USB and USB 2.0 HS/FS/LS) Three Bi-directional Differential Pair Channel MUX/DEMUX Switch Also Suitable for DisplayPort, PCIe Gen1/2/3, SATA 1.5/3/6G, SAS 1.5/3/6G and XAUI Applications Supports Data Rates up to 10 Gbps on Highbandwidth Path (SS) VCC Operating Range 3.3V ± 10% Wide –3dB Differential BW of Over 10 GHz on High-bandwidth Path (SS) Utilizes a unique adaptation method to maintain a constant channel impedance over the supported common mode voltage range Excellent High-bandwidth Path Dynamic Characteristics (at 2.5 GHz) – Crosstalk = –35 dB – Isolation = –23 dB – Insertion Loss = –1.1 dB – Return Loss = –11 dB Small 3.5mm x 9 mm, 42-Pin WQFN Package (RUA) Active Mode Power = 8 mW USB HOST 1 USB Connector Connector APPLICATIONS • • • • • • Desktop PCs Notebook PCs Tablets Docking Station Telecommunications Televisions USB Dock Station Connector 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2013, Texas Instruments Incorporated HD3SS6126 SLAS975 – NOVEMBER 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. FUNCTIONAL DIAGRAM NC NC NC NC 39 40 41 42 NC NC NC NC NC HS_OE HSA(n) HSA(p) SEL GND SSA0(p) SSA0(n) VDD GND SSA1(p) SSA1(n) GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 NC NC NC NC HSC(n) HSC(p) HSB(n) HSB(p) VDD SSB0(p) SSB0(n) SSB1(p) SSB1(n) SSC0(p) SSC0(n) SSC1(p) SSC1(n) 21 20 19 18 GND VDD GND NC 2 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links :HD3SS6126 HD3SS6126 www.ti.com SLAS975 – NOVEMBER 2013 TRUTH TABLE USB 3.0 SuperSpeed USB USB 3.0 Port Selection SEL SSA0/1 SSB0/1 0 To/From SSB0/1 To/From SSA0/1 SSC0/1 Off 1 To/From SSC0/1 Off To/From SSA0/1 spacer TRUTH TABLE USB 2.0 High-speed/Full-speed/Low-speed Path HS_OE SEL 0 0 1 USB 2.0 Port Selection HSA HSB HSC 0 To/From HSB To/From HSA Off 1 To/From HSC Off To/From HSA X Off Off Off PINOUT TOP VIEW NC NC NC NC 39 40 41 42 NC NC NC NC NC HS_OE HSA(n) HSA(p) SEL GND SSA0(p) SSA0(n) VDD GND SSA1(p) SSA1(n) GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 TQFN 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 NC NC NC NC HSC(n) HSC(p) HSB(n) HSB(p) VDD SSB0(p) SSB0(n) SSB1(p) SSB1(n) SSC0(p) SSC0(n) SSC1(p) SSC1(n) 21 20 19 18 GND VDD GND NC Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links :HD3SS6126 3 HD3SS6126 SLAS975 – NOVEMBER 2013 www.ti.com PIN FUNCTIONS PIN NAME NO. GND 10, 14, 17, 19, 21 Supply 8 I/O HSA(p) HSA(n) 7 HSB(p) 31 HSB(n) 32 HSC(p) 33 HSC(n) 34 HS_OE 6 NC I/O Ground Port A USB 2.0 positive signal Port A USB 2.0 negative signal I/O I/O Port C USB 2.0 positive signal Port C USB 2.0 negative signal I (Control) Output Enable H = Power Down L = Normal Operation Electrically No Connection SEL 9 I (Control) SSA0(p) 11 I/O SSA0(n) 12 SSA1(p) 15 SSA1(n) 16 SSB0(p) 29 SSB0(n) 28 SSB1(p) 27 SSB1(n) 26 SSC0(p) 25 SSC0(n) 24 SSC1(p) 23 SSC1(n) 22 13, 20, 30 Port B USB 2.0 positive signal Port B USB 2.0 negative signal 1, 2, 3, 4, 5, 18, 35, 36, 37, 38, 39, 40, 41, 42 VDD DESCRIPTION USB 3.0/2.0 Port Selection Control Pins Port A, Channel 0, USB 3.0 Positive Signal Port A, Channel 0, USB 3.0 Negative Signal I/O Port A, Channel 1, USB 3.0 Positive Signal Port A, Channel 1, USB 3.0 Negative Signal I/O Port B, Channel 0, USB 3.0 Positive Signal Port B, Channel 0, USB 3.0 Negative Signal I/O Port B, Channel 1, USB 3.0 Positive Signal Port B, Channel 1, USB 3.0 Negative Signal I/O Port C, Channel 0, USB 3.0 Positive Signal Port C, Channel 0, USB 3.0 Negative Signal I/O Port C, Channel 1, USB 3.0 Positive Signal Port C, Channel 1, USB 3.0 Negative Signal Supply 3.3V power supply voltage ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) Supply voltage range (1) (2) , VDD Voltage range Electrostatic discharge (2) (3) (4) (5) 4 MAX –0.3 4 Differential I/O, High-bandwidth signal path: SSA0/1(p/n), SSB0/1(p/n), SSC0/1(p/n) –0.5 4 Differential I/O, Low-bandwidth signal path: HSAp/n), HSB(p/n), HSC(p/n) -0.5 7 Control pin and single ended I/O –0.3 VDD + 0.3 Human body model (3) (4) Charged-device model (5) Continuous power dissipation (1) MIN ±2,000 ±500 UNIT V V V See Thermal Information Table Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values, except differential voltages, are with respect to network ground terminal. Tested in accordance with JEDEC Standard 22, Test Method A114-B Tested in accordance with JEDEC Standard 22, Test Method C101-A Tested in accordance with JEDEC Standard 22, Test Method A115-A Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links :HD3SS6126 HD3SS6126 www.ti.com SLAS975 – NOVEMBER 2013 THERMAL INFORMATION PARAMETER TEST CONDITIONS MIN TYP θJA Junction-to-ambient thermal resistance 53.8 θJB Junction-to-board thermal resistance 27.4 θJCT Junction-to-case-Top thermal resistance UNIT 38.2 (1) 27.3 5.6 ΨJB Junction-to-board thermal resistance Metric High-K board ΨJT Junction-to-case-Top thermal resistance Metric High-K board (1) (1) MAX °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953A, IC Package Thermal Metrics. Test conditions for ΨJB and ΨJT are clarified in the application report. RECOMMENDED OPERATING CONDITIONS Typical values for all parameters are at VCC = 3.3 V and TA = 25°C. All temp limits are specified by design. VDD Supply voltage VIH Input high voltage Control Pins VIL Input low voltage Control Pins VI/O_Diff Differential voltage Switch I/O differential voltage for High-bandwidth signal path only: SSA0/1(p/n), SSB0/1(p/n), SSC0/1(p/n) VI/O_CM Common voltage Switch I/O common mode voltage for High-bandwidth signal path only: SSA0/1(p/n), SSB0/1(p/n), SSC0/1(p/n) TA Operating free-air temperature MIN TYP MAX 3.0 3.3 3.6 UNIT V 2.0 VDD V –0.1 0.8 V 0 1.8 Vp-p 0 2.0 V 0 70 °C ELECTRICAL CHARACTERISTICS – DEVICE PARAMETERS over recommended operating conditions (unless otherwise noted) PARAMETER ICC CONDITIONS TYP MAX 2.4 3 mA VDD = 3.6V, VIN = VDD 95 µA VDD = 3.6V, VIN = GND 1 µA Input high current VDD = 3.6V, VIN = VDD 1 µA Input high current VDD = 3.6V, VIN = GND 1 µA 130 µA VDD = 3.6V, VIN = 2V, VOUT= 2V, (ILK on open outputs Port A) 4 µA VDD = 3.6V, VIN = 0V, VOUT= 0V to 4V, HS_OE_IN = GND 1 µA Supply current VDD = 3.6 V, SEL = VDD /GND; OE = GND; Outputs Floating IIH Input high current IIL Input high current IIH IIL MIN UNIT SEL HS_OE SSA0/1, SSB0/1, SSC0/1 ILK High-impedance leakage current VDD = 3.6V, VIN = 2V, VOUT= 2V, (ILK on open outputs Port B and C) HSA, HSB, HSC ILK High-impedance leakage current Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links :HD3SS6126 5 HD3SS6126 SLAS975 – NOVEMBER 2013 www.ti.com ELECTRICAL CHARACTERISTICS – SIGNAL SWITCH PARAMETERS under recommended operating conditions; RL, RSC = 50 Ω, CL = 10pF (unless otherwise noted) PARAMETER CONDITIONS MIN TYP MAX 70 250 70 250 UNIT SSA0/1(p/n), SSB0/1(p/n), SSC0/1(p/n) Signal Path ton SEL-to-Switch ton toff SEL-to-Switch toff tPD Switch propagation delay tSK(O) Inter-pair output skew (CH-CH) tSK(b-b) Intra-Pair Output Skew (bit-bit) CON Outputs ON capacitance VIN = 0 V, Outputs Open, Switch ON 1.5 pF COFF Outputs OFF capacitance VIN = 0V, Outputs Open, Switch OFF 1 pF RON Output ON resistance VDD = 3.3V, VCM = 0V - 2V, IO = –8 mA 5 ΔRON ON resistance match between pairs of the same channel RFLAT_ON ON resistance flatness (RON(MAX)– RON(MIN ) RL Differential return loss (VCM = 0 V) XTALK OIRR Differential crosstalk (VCM = 0 V) Differential off-isolation (VCM = 0 V) RSC and RL = 50 Ω, See Figure 1 RSC and RL = 50 Ω, See Figure 3 RSC and RL = 50 Ω, See Figure 3 Differential insertion loss (VCM = 0 V) BW Bandwidth 85 ps 20 ps 8 ps 8 Ω VDD = 3.3 V; 0 V ≤ VIN ≤ 2 V; IO = –8 mA 0.7 Ω VDD = 3.3 V; -0 V ≤ VIN ≤ 2 V 1.15 Ω f = 0.3 MHz -25 f = 2.5 GHz –11 f = 4 GHz –11 f = 0.3 MHz -85 f = 2.5 GHz –35 f = 4 GHz –33 f = 0.3 MHz -85 f = 2.5 GHz -23 f = 4 GHz IL ns dB dB –21 f = 0.3 MHz -0.43 f = 2.5 GHz –1.1 f = 4 GHz –1.3 At –3 dB dB dB 10 GHz HSA(p/n), HSB(p/n), HSC(p/n) SIGNAL PATH SEL to Switch tON tON HS_OE to Switch tON SEL to Switch tOFF tOFF tPD HS_OE to Switch tOFF (1) Switch propagation delay 30 See Figure 2 17 See Figure 2 See Figure 3 ns 12 10 250 ps tSK(O) (1) Inter-pair output skew (CH-CH) 100 200 tSK(P) (1) Intra-Pair Output Skew (bit-bit) 100 200 CON Outputs ON capacitance VIN = 0 V, Outputs Open, Switch ON 6 7.5 pF COFF Outputs OFF capacitance VIN = 0 V, Outputs Open, Switch OFF 3.5 6 pF 3 6 VDD = 3 V, VIN = 2.4 V, IO = 30 mA 3.4 6 VDD = 3 V; VIN = 0 V; IO = 30 mA 0.2 VDD = 3 V; VIN = 1.7 V; IO = -15 mA 0.2 RON Output ON resistance ΔRON (1) 6 ON resistance match between pairs of the same channel VDD = 3 V, VIN = 0 V, IO = 30 mA ps Ω Ω Specified by design Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links :HD3SS6126 HD3SS6126 www.ti.com SLAS975 – NOVEMBER 2013 ELECTRICAL CHARACTERISTICS – SIGNAL SWITCH PARAMETERS (continued) under recommended operating conditions; RL, RSC = 50 Ω, CL = 10pF (unless otherwise noted) PARAMETER CONDITIONS MIN TYP MAX UNIT SSA0/1(p/n), SSB0/1(p/n), SSC0/1(p/n) Signal Path ON resistance flatness (RON(MAX)– RON(MIN ) RFLAT_ON VDD = 3 V; VIN = 0 V; IO = 30 mA 1 VDD = 3 V; VIN = 1.7 V; IO = -15 mA 1 Ω XTALK Differential crosstalk (VCM = 0 V) RL = 50 Ω, f = 250 MHz -40 OIRR Differential off-isolation (VCM = 0 V) RL = 50 Ω, f = 250 MHz -41 dB BW Bandwidth RL = 50 Ω 0.9 GHz dB TEST TIMING DIAGRAMS 50% SEL 90% VOUT 10% t off t on Figure 1. Select to Switch ton and toff VCC HSB or HSC VOUT1 or VOUT2 VIN Logic Input (1) RL CL VCOM tON 500 Ω 50 pF V+ tOFF 500 Ω 50 pF V+ HSA CL(2) HSB or HSC VCTRL TEST RL SEL CL(2) GND RL 1.8 V Logic Input (VI) 50% 50% 0 tON tOFF Switch Output (VOUT1 or VOUT2) (1) (2) 90% 90% VOH VOL All input pulses are supplied by generators have the following characteristics: PRR ≤ 10 MHZ, ZO = 50 Ω, tr< 5 ns, tf < 5 ns. CL includes probe and jig capacitance. Figure 2. Turn-On (tON) and Turn-Off Time (tOFF) Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links :HD3SS6126 7 HD3SS6126 SLAS975 – NOVEMBER 2013 www.ti.com Vcc 50 Ω HD3SS6126 A(p) B/C(p) 50 Ω B/C(p) A(p) 50 Ω A(n) B/C(n) B/C(n) A(n) 50 Ω SEL C/B (p) 50% 50% C/B (n) A (p) 50% 50% A (n) tP1 tP2 Inter-pair skew tPD = Max(tp1, tp2) tSK(O) = Difference between tPD for any two pairs of outputs t1 t3 t2 t4 C/B/A (p) 50% C/B/A (n) C/B/A (p) tSK(O) C/B/A (n) Intra-pair skew tSK(b-b) = 0.5 X |(t4 – t3) + (t1 – t2)| NOTES: 1. Measurements based on an ideal input with zero intra-pair skew on the input, i.e. the input at A to B/C or the input at B/C to A 2. Inter-pair skew is measured from lane to lane on the same channel, e.g. C0 to C1 3. Intra-pair skew is defined as the relative difference from the p and n signals of a single lane Figure 3. Propagation Delay and Skew 8 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links :HD3SS6126 PACKAGE OPTION ADDENDUM www.ti.com 20-Nov-2013 PACKAGING INFORMATION Orderable Device Status (1) HD3SS6126RUAR ACTIVE Package Type Package Pins Package Drawing Qty WQFN RUA 42 3000 Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR Op Temp (°C) Device Marking (4/5) 0 to 70 HD3SS6126 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. 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Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 20-Nov-2013 Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 20-Nov-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device HD3SS6126RUAR Package Package Pins Type Drawing WQFN RUA 42 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 3000 330.0 16.4 Pack Materials-Page 1 3.8 B0 (mm) K0 (mm) P1 (mm) 9.3 1.0 8.0 W Pin1 (mm) Quadrant 16.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 20-Nov-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) HD3SS6126RUAR WQFN RUA 42 3000 367.0 367.0 38.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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