LS4154 Fast Switching Diode Features Silicon Epitaxial Planar Diode Electrical data identical with the device 1N4154 Quadro Melf package Applications Extreme fast switches Mechanical Data Case:QuadroMELF Glass Case (SOD-80) Weight: approx. 34 mg Cathode Band Color: Black Absolute Maximum Ratings Parameter Test Condition Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp= 1 us Repetitive peak forward current Forward current Average forward current VR=0 Power dissipation Thermal Characteristics Parameter Junction ambient ( Tamb=25oC unless otherwise specified ) Symbol Value Unit VRRM 35 V VR 25 V IFSM 2 A IFRM 500 mA mA IF 300 IFAV 150 mA PV 500 mW ( Tamb=25oC unless otherwise specified ) Test Condition on PC board 50 mm X 50mm X 1.6mm Junction temperature Stroage temperature range Symbol Value Unit RthJA 500 K/W Tj 175 o C Tstg -65 to +175 o C Electrical Characteristics Parameter ( Tamb=25oC unless otherwise specified ) Test Condition Forward voltage IF=30mA Reverse current VR=25V VR=25V, Tj=150oC Symbol IR Breakdown voltage IR=5uA, tp/T=0.01, tp=0.3ms V(BR) Diode capacitance VR=0, f=1MHz, VHF=50mV CD Reverse recovery time IF=IR=10mA, iR=1mΑ IF=10mA, VR=6V, iR=0.1x IR, RL=100Ω Min. VF Typ. Max. Unit 1 V 100 nA 100 uA 4 pF 35 V 4 trr 666 2 ns Typical characteristics ( Tamb=25oC unless otherwise specified ) Package Dimensions in mm (inches) 667