SSFP4N90
StarMOST Power MOSFET
■
Extremely high dv/dt capability
■
Low Gate Charge Qg results in
VDSS = 900V
Simple Drive Requirement
ID25 = 4A
■
100% avalanche tested
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeatability
RDS(ON) = 4.2Ω
Description
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout
Pin1–Gate
with planar stripe DMOS technology.
Pin2–Drain
Pin1–Source
Application
■
Switching application
Absolute Maximum Ratings
Parameter
Max.
Units
ID@Tc=25ْ C
Continuous Drain Current,VGS@10V
4
ID@Tc=100ْC
Continuous Drain Current,VGS@10V
2.3
IDM
Pulsed Drain Current
16
PD@TC=25ْC
Power Dissipation
140
W
Linear Derating Factor
1.12
W/ْ C
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
170
mJ
IAR
Avalanche Current
2.2
A
EAR
Repetitive Avalanche Energy
8.5
mJ
dv/dt
Peak Diode Recovery dv/dt
4.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
①
②
①
①
③
A
–55 to +150
ْC
300(1.6mm from case)
Soldering Temperature, for 10 seconds
10 Ibf in(1.1N m)
Mounting Torque,6-32 or M3 screw
●
●
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
—
0.89
RθCS
Case-to-Sink,Flat,Greased Surface
—
0.5
－
RθJA
Junction-to-Ambient
—
—
62.5
Units
ْC/W
1
SSFP4N90
StarMOST Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
Max. Units
Min.
Typ.
900
—
—
V
Test Conditions
VGS=0V,ID=250μA
△V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient
—
1.05
—
RDS(on)
Static Drain-to-Source On-resistance
—
3.5
4.2
Ω VGS=10V,ID=2A
VGS(th)
Gate Threshold Voltage
3.0
—
5.0
V
VDS=VGS,ID=250μA
gfs
Forward Transconductance
－
2.0
—
S
VDS=50V,ID=2A
IDSS
Drain-to-Source Leakage current
—
—
10
—
—
100
Gate-to-Source Forward leakage
—
—
100
Gate-to-Source Reverse leakage
—
—
-100
Qg
Total Gate Charge
—
17
22
Qgs
Gate-to-Source charge
—
4.5
－
Qgd
Gate-to-Drain("Miller") charge
—
7.5
－
td(on)
Turn-on Delay Time
—
25
60
tr
Rise Time
—
50
110
td(off)
Turn-Off Delay Time
—
40
90
tf
Fall Time
—
35
80
IGSS
LD
Internal Drain Inductance
—
4.5
—
LS
Internal Source Inductance
—
7.5
—
Ciss
Input Capacitance
—
740
960
Coss
Output Capacitance
—
65
85
Crss
Reverse Transfer Capacitance
—
5.6
7.3
V/ْC Reference to 25ْC,ID=250μA
μA
nA
④
VDS=900V,VGS=0V
VDS=720V,VGS=0V,TJ=125ْC
VGS=30V
VGS=-30V
ID=4A
nC VDS=720V
VGS=10V See Fig.6 and 13④
VDD=450V
ID=4A
nS
RG=25Ω
Between lead,
6mm(0.25in.)
nH from package
and center of
die contact
VGS=0V
pF VDS=25V
f=1.0MHZ See Figure 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
.
ISM
Pulsed Source Current
(Body Diode) ①
.
VSD
Min.
Typ.
Max.
—
—
4
Units
Test Conditions
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
—
—
16
Diode Forward Voltage
—
—
1.4
V
TJ=25ْC,IS=4A,VGS=0V ④
trr
Reverse Recovery Time
—
450
－
nS
Qrr
Reverse Recovery Charge
—
3.5
－
nC
TJ=25ْC,IS=4A
di/dt=100A/μs ④
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating;pulse width limited by
max.junction temperature(see figure 11)
② L = 67mH, IAS = 4A, VDD = 50V,
③ ISD≤4A,di/dt≤200A/μS,VDD≤V(BR)DSS,
TJ≤25ْ C
④ Pulse width≤300μS; duty cycle≤2%
RG = 25Ω, Starting TJ = 25°C
2