HANBit HMF8M8F4V/4VT FLASH-ROM MODULE 8MByte (8M x 8-Bit) – SMM Packages Part No. HMF8M8F4V,HMF8M8F4VT GENERAL DESCRIPTION The HMF8M8F4V is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a x8bit configuration. The module consists of four 2M x 8 FROM mounted on a 100-pin, MMC connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chips enable inputs, /CS(/CS0, /CS1, /CS2, /CS3) are used to enable the module’s 4 chips independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are LVTTLcompatible. PIN ASSIGNMENT 50-PIN P1 Connector FEATURES w Part identification - HMF8M8F4V (Bottom boot block configuration) - HMF8M8F4VT (Top boot block configuration) 50-PIN P2 Connector PIN Symbol PIN Symbol PIN Symbol PIN Symbol 1 VCC 26 VCC 1 VCC 26 VCC 2 NC 27 NC 2 NC 27 NC 3 NC 28 A19 3 /WE 28 NC 4 A20 29 A18 4 NC 29 NC 30 A17 5 Ready 30 NC 31 A16 6 NC 31 NC 5 NC w Access time: 80, 90, 120ns 6 w High-density 8MByte design 7 NC 32 A15 7 NC 32 NC w High-reliability, low-power design 8 VSS 33 VSS 8 VSS 33 VSS w Single + 3V to 3.6V power supply 9 NC 34 A14 9 /OE 34 NC w 100-Pin Designed 10 NC 35 A13 10 /CS0 35 /CS2 11 NC 36 NC 11 /CS1 36 /CS3 w Minimum 1,000,000 write/erase cycle w 20-year data retention at 125 oC 12 NC 37 DQ7 12 NC 37 NC 13 VSS 38 VSS 13 VSS 38 VSS w Flexible sector architecture 14 DQ6 39 DQ5 14 NC 39 NC w Embedded algorithms 15 DQ4 40 A12 15 NC 40 NC w Erase suspend / Erase resume 16 DQ3 41 A11 16 NC 41 NC w The used device is Am29LV116B 17 DQ2 42 A10 17 /Reset 42 NC OPTIONS 18 VSS 43 VSS 18 VSS 43 VSS 19 DQ1 44 A9 19 NC 44 NC 50-Pin Fine Pitch MMC Connector P1,P2 MARKING w Timing NC 20 DQ0 45 A8 20 NC 45 NC 80ns access - 80 21 A0 46 A7 21 NC 46 NC 90ns access - 90 22 A1 47 A6 22 NC 47 NC 23 A2 48 A5 23 VSS 48 VSS 120ns access -120 w Packages 100-pin MMC 24 A3 49 A4 24 NC 49 NC 25 VCC 50 VCC 25 VCC 50 VCC F Note: P1-A23(27Pin) must be Grounded URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit HMF8M8F4V/4VT FUNCTIONAL BLOCK DIAGRAM 8 DQ0 - DQ7 21 A0 - A20 A0-20 DQ 0-7 /WE U1 /OE /CE /CS0 A0-20 DQ 0-7 /WE U2 /OE /CE /CS1 A0-20 DQ 0-7 /WE U3 /OE /CE /CS2 A0-20 DQ 0-7 /WE /WE /OE /OE U4 /CE /CS3 /Reset Ready URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit HMF8M8F4V/4VT TRUTH TABLE MODE /CS /OE /WE RESET DQ Vcc±0.3V X X Vcc±0.3V HIGH-Z RESET X X X L HIGH-Z SECTOR PROTECT L H L VID DIN, DOUT SECTOR UNPROTECT L H L VID DIN, DOUT READ L L H H DOUT WRITE L H L H DOUT STANDBY Note : X means don't care ABSOLUTE MAXIMUM RATINGS PARAMETER RATING Voltage on Any Pin Relative to Vss -0.5V to Vcc +0.5V Voltage on Vcc Supply Relative to Vss -0.5V to +4.0V Oupput Short Circuit Current 200mA -65oC to +150oC Storage Temperature Operating Temperature -55oC to +125oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS PARAMETER RANGE Vcc for regulated Supply Voltage +3.0V to 3.6V Vcc for full voltage +2.7V to 3.6V DC AND OPERATING CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS Input Load Current VIN= VSS to VCC , VCC= VCC max IL1 ±1.0 µA Output Leakage Current VOUT= VSS to VCC, VCC= VCC max IL0 ±1.0 µA Output High Voltage IOH = -2.0mA, Vcc = Vcc min VOH Output Low Voltage IOL = 4.0mA, Vcc = Vcc min VOL 0.45 V Vcc Active Read Current /CE = VIL, ,/OE=VIH, f=5MHz ICC1 16 mA URL: www.hbe.co.kr REV.02(August,2002) 3 0.85Vcc V HANBit Electronics Co., Ltd. HANBit HMF8M8F4V/4VT Vcc Active Write Current /CE = VIL, /OE=VIH ICC2 30 mA Vcc Standby Current /CE, RESET=VCC±0.3V ICC3 5 mA Vcc Reset Current RESET=Vss±0.3V, ICC4 5 mA 2.5 V Low Vcc Lock-Out Voltage VLKO 2.3 ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. MAX. 0.7 15 COMMENTS Excludes 00H programming Sector Erase Time - Sec prior to erasure Byte Programming Time - 9 Excludes system-level µS 300 overhead Excludes system-level Chip Programming Time - 18 54 sec overhead TSOP PIN CAPACITANCE PARAMETER PARAMETER SYMBOL TEST SETUP TYP. MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF DESCRIPTION CIN Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes: Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC STANDARD tAVAV tRC tAVQV tACC DESCRIPTION -80 -90 (NOTE1) (NOTE1) Min 80 90 ns Max 80 90 ns Max 80 90 ns Max 80 90 ns TEST SETUP Read Cycle Time UNIT /CE = VIL Address to Output Delay /OE = VIL tELQV tCE Chip Enable to Output Delay tGLQV tOE Chip Enable to Output Delay URL: www.hbe.co.kr REV.02(August,2002) /OE = VIL 4 HANBit Electronics Co., Ltd. HANBit HMF8M8F4V/4VT tEHQZ tDF Chip Enable to Output High-Z Max 25 30 ns tGHQZ tDF Output Enable to Output High-Z Max 25 30 ns tAXQX tQH Min 0 0 ns -80 -90 UNIT Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First TEST CONDITIONS Notes : Test Conditions : Output Load : 1TTL gate and 100 pF Input rise and fall times : 5 ns Input pulse levels: 0V to 3.0V Timing measurement reference level Input : 1.5 V Output : 1.5V 3.3V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tWC Write Cycle Time Min 80 90 ns tAVWL tAS Address Setup Time Min 0 0 ns tWLAX tAH Address Hold Time Min 45 45 ns tDVWH tDS Data Setup Time Min 35 45 ns tWHDX tDH Data Hold Time Min 0 0 ns URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF8M8F4V/4VT tOES Output Enable Setup Time Min 0 0 ns Read Recover Time Before Write Min 0 0 ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 35 35 ns tWHWL tWPH Write Pulse Width High Min 30 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 9 µs Typ 0.7 0.7 sec tWHWH2 tWHWH2 Sector Erase Operation (Note1) Max 50 50 sec tVCS Vcc Setup Time Min 50 50 µs tRB Recovery time from RY/BY Min 0 0 µs Program/Erase Valid to RY/BY Delay Min 90 90 µs -80 -90 UNIT tBUSY u Alternate /CE Controlled Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tWC Write Cycle Time Min 80 90 ns tAVEL tAS Address Setup Time Min 0 0 ns tELAX tAH Address Hold Time Min 45 45 ns tDVEH tDS Data Setup Time Min 35 45 ns tEHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns Min 0 0 ns Read Recover Time Before Write tGHEL tGHEL /OE High to /WE Low tWLEL tWS /WE Setup Time Min 0 0 ns tEHWH tWH /WE Hold Time Min 0 0 ns tELEH tCP /CE Pulse Width Min 35 35 ns tEHEL tCPH /CE Pulse Width High Min 30 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note) Typ 0.7 0.7 sec URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF8M8F4V/4VT u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF8M8F4V/4VT u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF8M8F4V/4VT u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF8M8F4V/4VT u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF8M8F4V/4VT PACKAGE DIMENSIONS UNIT: mm 90.17 5.08 3.70 1 5.08 26 3.70 1 26 17.60 25.00 25 50 25 50 P2 P1 3.70 3.70 1.20 3.25 3.45 5.00 Main Board -Connector Part No. HMF8M8F4V Top: 50-pin 0.6mm Pitch Free Height Plugs, AMP Part No. 316076-3 Bottom: 50-pin 0.6mm Pitch Free Height Receptacles, AMP Part No. 316077-3 URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd. HANBit HMF8M8F4V/4VT ORDERING INFORMATION Part Number Density Org. Package Speed Vcc Function HMF8M8F4V 8MByte 8MX 8bit 100 Pin-MMC 80,90,120(ns) 3V Bottom HMF8M8F4VT 8MByte 8MX 8bit 100 Pin-MMC 80,90,120(ns) 3V Top URL: www.hbe.co.kr REV.02(August,2002) 12 HANBit Electronics Co., Ltd.