HANBit HMF2M32B4VN FLASH-ROM MODULE 8MByte (2M x 32Bit), 144-Pin SODIMM, 3.3V Part No. HMF2M32B4VN GENERAL DESCRIPTION The HMF2M32B4VN is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a x32bit configuration. The module consists of four 2M x 8bit FROM mounted on a 144-pin, double-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/CS0, /CS1, /CS2, /CS3, /CS4, /CS5, /CS6, CS7) are used to enable the module’s 4 bytes independently. Outputs enable (/OE) and write enable (/WE) can set the memory input and output.When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are TTL -compatible. FEATURES w Part Identifications HMF2M32B4VN : 8Mbyte, 144-pin SODIMM, Gold wAccess time : 70, 90 and 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 3V ± 0.5V power supply w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 144-pin SODIMM w Minimum 1,000,000 write/erase cycle w Sectors erase architecture w Sector group protection w Temporary sector group unprotection w The used device is 2Mx8bit 48Pin TSOP OPTIONS MARKING w Timing 70ns access -70 90ns access -90 120ns access -120 w Packages 144-pin SODIMM ,URL: www.hbe.co.kr REV.02(August,2002) B 1 HANBit Electronics Co., Ltd. HANBit HMF2M32B4VN PIN ASSIGNMENT PIN Front PIN Back PIN Frontl PIN Back PIN Front PIN Back 1 Vss 2 Vss 49 DQ13 50 NC 97 DQ22 98 NC 3 DQ0 4 NC 51 DQ14 52 NC 99 DQ23 100 NC 5 DQ1 6 NC 53 DQ15 54 NC 101 VCC 102 VCC 7 DQ2 8 NC 55 Vss 56 Vss 103 A6 104 A7 9 DQ3 10 NC 57 NC 58 NC 105 A8 106 NC 11 VCC 12 VCC 59 NC 60 NC 107 Vss 108 Vss 13 DQ4 14 NC 61 NC 62 NC 109 A9 110 A12 15 DQ5 16 NC 63 VCC 64 VCC 111 A10 112 A11 17 DQ6 18 NC 65 NC 66 NC 113 VCC 114 VCC 19 DQ7 20 NC 67 /WE 68 /OE 115 /CS2 116 NC(/CS6) 21 Vss 22 69 A13 70 A16 117 /CS3 118 NC(/CS7) 23 /CS0 24 71 A14 72 A17 119 Vss 120 Vss 25 /CS1 26 73 A15 74 A18 121 DQ24 122 NC 27 VCC 28 Vss NC(/CS4 ) NC(/CS5 ) VCC 75 Vss 76 Vss 123 DQ25 124 NC 29 A0 30 A3 77 A19 78 A21 125 DQ26 126 NC 31 A1 32 A4 79 A20 80 NC 127 DQ27 128 NC 33 A2 34 A5 81 VCC 82 VCC 129 VCC 130 VCC 35 Vss 36 Vss 83 DQ16 84 NC 131 DQ28 132 NC 37 DQ8 38 NC 85 DQ17 86 NC 133 DQ29 134 NC 39 DQ9 40 NC 87 DQ18 88 NC 135 DQ30 136 RY_/BY 41 DQ10 42 NC 89 DQ19 90 NC 137 DQ31 138 /RESET 43 DQ11 44 NC 91 Vss 92 Vss 139 Vss 140 Vss 45 VCC 46 VCC 93 DQ20 94 NC 141 NC 142 NC 47 DQ12 48 NC 95 DQ21 96 NC 143 VCC 144 VCC ,URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit HMF2M32B4VN FUNCTIONAL BLOCK DIAGRAM DQ32 DQ 0-DQ31 A21 A0-A20 A0 DQ15/A1 A0-19 DQ0-7 A1-A20 /WE U1 /OE /CE /CS0 DQ15/A1 A0-19 DQ8-15 /WE U2 /OE /CE /CS1 DQ15/A1 A0-19 DQ16-23 /WE U3 /OE /CE /CS2 DQ15/A1 A0-19 DQ24-31 /WE /WE /OE /OE U4 /CE /CS3 /RESET FROM U1 - U8 RY_/BY ,URL: www.hbe.co.kr REV.02(August,2002) FROM U1 - U8 3 HANBit Electronics Co., Ltd. HANBit HMF2M32B4VN TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X Vcc± 0.3 X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Dout ACTIVE WRITE or ERASE H L L Din ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to +0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -55Oc to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause per manent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rat ing conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for ±5% device Supply Voltages VCC 3.0V 3.6V Vcc for ± 10% device Supply Voltages Vcc 2.7V 3.6V Ground VSS 0 PARAMETER TYP. MAX 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) TEST CONDITIONS PARAMETER SYMBOL MIN MAX UNITS Input Leakage Current Vcc=Vcc max, V IN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.5mA, Vcc = Vcc min 0.85* VOH V VCC Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL Vcc Active Current for Read(1) Vcc Active Current for Program or Erase(2) /CE = VIL, /OE=VIH, ICC1 /CE = VIL, /OE=VIH Vcc Standby Current /CE= VIH Low Vcc Lock-Out Voltage 0.45 V 36 64 mA ICC2 80 120 mA ICC3 0.8 20 mA VLKO 2.3 2.5 V Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max ,URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF2M32B4VN ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. MAX. Sector Erase Time - 0.7 15 Sec Byte Programming Time - 9 300 µs Chip Programming Time - 18 54.8 Sec COMMENTS Excludes 00H programming prior to erasure Excludes system-level overhead Excludes system-level overhead CAPACITANCE PARAMETER SYMBOL PARAMETER DESCRIPTION CIN TEST SETUP TYP. MAX UNIT VIN = 0 24 30 pF VOUT = 0 34 4812 pF VIN = 0 30 369 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC STANDARD TAVAV tRC Speed Options DESCRIPTION TEST SETUP Read Cycle Time UNIT 70R 80 -90 -120 Min 70 80 90 120 ns Max 70 80 90 120 ns Max 70 80 90 120 ns TAVQV tACC Address to Output Delay /CE = VIL /OE = VIL TELQV tCE Chip Enable to Output Delay /OE = VIL TGLQV tOE Chip Enable to Output Delay Max 30 30 35 50 ns TEHQZ tDF Chip Enable to Output High-Z Max 25 25 30 30 ns TGHQZ tDF Max 125 25 30 30 ns TAXQX tQH Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First Min 0 0 0 0 ns Notes : Test Conditions Output Load : 1TTL gate and Output Load Capacitance 100 pF, in case of 55ns-30pF Input rise and fall times : 5 ns , In case of 55ns-5ns Input pulse levels : 0 .45V to 2.4V, In case of 55ns- 0.0V-3.0V Timing measurement reference level Input : 0.8V, Incase of 55ns-1.5V Output : 2.0V, In case of 55ns-1.5V ,URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF2M32B4VN 3.3V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD 70R 80 -90 -120 TAVAV tWC Write Cycle Time Min 70 80 90 120 TAVWL tAS Address Setup Time Min TWLAX tAH Address Hold Time Min 45 45 45 50 ns TDVWH tDS Data Setup Time Min 35 35 45 50 ns TWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recover Time Before Write Min 0 ns 0 ns ns TGHWL tGHWL TELWL tCS /CE Setup Time Min 0 ns TWHEH tCH /CE Hold Time Min 0 ns TWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec Vcc set up time Min 50 µs tVCS 35 35 45 50 ns Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations ,URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF2M32B4VN u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS SPEED OPTION UNIT DESCRIPTION JEDEC STANDARD 70R 80 -90 -120 tAVAV tWC Write Cycle Time Min 70 80 90 120 tAVEL tAS Address Setup Time Min tELAX tAH Address Hold Time Min 45 45 45 50 ns tDVEH tDS Data Setup Time Min 35 35 45 50 ns tEHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHEL tGHEL Read Recover Time Before Write Min 0 ns tWLEL tWS /WE Setup Time Min 0 ns tEHWH tWH /WE Hold Time Min 0 ns tELEH tCP /CE Pulse Width Min tEHEL tCPH /CE Pulse Width High Min 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note) Typ 0.7 sec 0 35 35 ns 45 50 Notes : This does not include the preprogramming time. ,URL: www.hbe.co.kr REV.02(August,2002) 7 ns HANBit Electronics Co., Ltd. ns HANBit HMF2M32B4VN u READ OPERATIONS TIMING u RESET TIMING ,URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF2M32B4VN u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS ,URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF2M32B4VN u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) ,URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF2M32B4VN u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS ,URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd. HANBit HMF2M32B4VN PACKAGE DIMENSIONS Unit : mm PCB Thickness: 1.0mm (1.0t - 1.1t) Immersion Gold PCB Pattern 2.3 mm MAX 2.55 mm MIN 0.25 mm MAX 0.8 mm 0.60±0.05 mm 1.0 ± 0.1mm (Solder & Gold Plating) ,URL: www.hbe.co.kr REV.02(August,2002) 12 HANBit Electronics Co., Ltd. HANBit HMF2M32B4VN ORDERING INFORMATION Part Number Density Org. Package HMF2M32B4VN-70 8MByte 2MX 32bit 144 Pin-SODIMM HMF2M32B4VN-90 8MByte 2MX 32bit HMF2M32B4VN-120 8MByte 2MX 32bit ,URL: www.hbe.co.kr REV.02(August,2002) Components Vcc SPEED TSOP(2Mx8)*4 3.3V 70ns 144 Pin-SODIMM TSOP(2Mx8)*4 3.3V 90ns 144 Pin-SODIMM TSOP(2Mx8)*4 3.3V 120ns 13 Composition HANBit Electronics Co., Ltd.